mm908e621 Freescale Semiconductor, Inc, mm908e621 Datasheet - Page 15

• Manufacturer Part Number: mm908e621
• Description: Integrated Quad Half-bridge And Triple High-side With Embedded Mcu And Lin For High End Mirror
• Manufacturer: Freescale Semiconductor, Inc

Table 4. Dynamic Electrical Characteristics
microcontroller chip. Characteristics noted under conditions 9.0 V
Typical values noted reflect the approximate parameter mean at T
Analog Integrated Circuit Device Data
Freescale Semiconductor
LIN PHYSICAL LAYER
Notes
Driver Characteristics for Slow Slew Rate
Driver Characteristics for Fast Slew Rate
Receiver Characteristics and Wake-Up Timings
Driver Characteristics for Normal Slew Rate
Dominant Propagation Delay TXD to LIN
Dominant Propagation Delay TXD to LIN
Recessive Propagation Delay TXD to LIN
Recessive Propagation Delay TXD to LIN
Duty Cycle 1: D1 = t
Duty Cycle 2: D2 = t
Dominant Propagation Delay TXD to LIN
Dominant Propagation Delay TXD to LIN
Recessive Propagation Delay TXD to LIN
Recessive Propagation Delay TXD to LIN
Duty Cycle 3: D3 = t
Duty Cycle4: D4 = t
LIN High Slew Rate (Programming Mode)
Receiver Dominant Propagation Delay
Receiver Recessive Propagation Delay
Receiver Propagation Delay Symmetry
Bus Wake-Up Deglitcher
Bus Wake-Up Event Reported
25.
26.
27.
28.
29.
All characteristics are for the analog chip only. Please refer to the 68HC908EY16 datasheet for characteristics of the
V
to LIN signal threshold defined at each parameter.
See
See
Measured between LIN signal threshold V
t
rise time is strongly dependent upon the decoupling capacitor at VDD terminal.
WAKE
SUP
Figure
Figure
from 7.0 V to 18 V, bus load R0 and C0 1.0 nF/1.0 kΩ, 6.8 nF/660 Ω, 10 nF/500 Ω. Measurement thresholds: 50% of TXD signal
is typically 2 internal clock cycles after LIN rising edge detected. See
6, page 18.
7, page 19.
Bus_rec(max)
Bus_rec(min)
Bus_rec(max)
Bus_rec(min)
Characteristic
(29)
/ (2 x t
/ (2 x t
/ (2 x t
/ (2 x t
DYNAMIC ELECTRICAL CHARACTERISTICS
BIT
BIT
BIT
BIT
(28)
(28)
), t
), t
), t
), t
BIT
BIT
BIT
BIT
(25)
= 50 µs, V
= 96 µs, V
= 96 µs, V
= 50 µs, V
,
(25)
(27)
IL
,
or V
(26)
IH
SUP
SUP
SUP
and 50% of RXD signal.
SUP
= 7.6V..18V
= 7.0V..18V
= 7.0V..18V
= 7.6V..18V
≤
A
V
= 25°C under nominal conditions unless otherwise noted.
SUP
t
t
≤
t
t
t
t
t
t
t
DOM-
DOM-
REC-
REC-
Symbol
DOM-
DOM-
SR
PROPWL
REC-
REC-
t
t
16 V, -40°C
R-SYM
WAKE
Figure 9
t
t
D1
D2
D3
D4
RH
FAST
RL
MAX
MAX
MAX
MAX
MIN
MIN
MIN
MIN
and
DYNAMIC ELECTRICAL CHARACTERISTICS
Figure
≤
0.396
0.417
Min
-2.0
T
30
—
—
—
—
—
—
—
—
—
—
—
—
–
–
J
≤
8, page 19. In Sleep mode the V
125°C unless otherwise noted.
Typ
3.5
3.5
—
—
—
—
—
—
—
—
20
—
50
20
–
–
–
–
0.581
0.590
Max
100
100
100
100
150
6.0
6.0
2.0
50
50
50
50
—
—
–
–
908E621
V/µs
Unit
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
DD
15