mc68hc908jl3mp Freescale Semiconductor, Inc, mc68hc908jl3mp Datasheet - Page 40

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mc68hc908jl3mp

Manufacturer Part Number
mc68hc908jl3mp
Description
Hcmos Microcontroller Unit
Manufacturer
Freescale Semiconductor, Inc
Datasheet
FLASH Memory (FLASH)
4.3 Functional Description
4.4 FLASH Control Register
Technical Data
40
NOTE:
Address:
The FLASH memory consists of an array of 4096 or 1536 bytes with an
additional 48 bytes for user vectors. The minimum size of FLASH
memory that can be erased is 64 bytes; and the maximum size of FLASH
memory that can be programmed in a program cycle is 32 bytes (a row).
Program and erase operations are facilitated through control bits in the
Flash Control Register (FLCR). Details for these operations appear later
in this section. The address ranges for the user memory and vectors are:
An erased bit reads as logic 1 and a programmed bit reads as logic 0.
A security feature prevents viewing of the FLASH contents.
The FLASH Control Register controls FLASH program and erase
operations.
HVEN — High Voltage Enable Bit
1. No security feature is absolutely secure. However, Motorola’s strategy is to make reading or
copying the FLASH difficult for unauthorized users.
Reset:
Read:
Write:
This read/write bit enables high voltage from the charge pump to the
memory for either program or erase operation. It can only be set if
either PGM=1 or ERASE=1 and the proper sequence for program or
erase is followed.
$EC00 – $FBFF; user memory, 4096 bytes:
MC68H(R)C908JL3/JK3
$F600 – $FBFF; user memory, 1536 bytes: MC68H(R)C908JK1
$FFD0 – $FFFF; user interrupt vectors, 48 bytes.
$FE08
Bit 7
0
0
Figure 4-1. FLASH Control Register (FLCR)
FLASH Memory (FLASH)
6
0
0
5
0
0
4
0
0
HVEN
3
0
MC68H(R)C908JL3
MASS
2
0
ERASE
1
0
1
MOTOROLA
Rev. 1.0
PGM
Bit 0
0

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