mpc2107 Freescale Semiconductor, Inc, mpc2107 Datasheet - Page 7

• Manufacturer Part Number: mpc2107
• Description: 256kb And 512kb Burstramtm Secondary Cache Mod
• Manufacturer: Freescale Semiconductor, Inc

DATA RAM MCM67M518, MCM67M618 SYNCHRONOUS TRUTH TABLE
NOTES:
ASYNCHRONOUS TRUTH TABLE
NOTES:
DATA RAM MCM6206 ASYNCHRONOUS TRUTH TABLE
NOTES:
ABSOLUTE MAXIMUM RATINGS
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
MOTOROLA FAST SRAM
Power Supply Voltage
Voltage Relative to V SS
Output Current (per I/O)
Power Dissipation
Temperature Under Bias
Operating Temperature
Storage Temperature
STANDBY
1. X means Don’t Care.
2. All inputs except COE must meet set–up and hold times for the low–to–high transition of clock (CLK0 – CLK4).
3. Wait states are inserted by suspending burst.
1. X means Don’t Care.
2. For a write operation following a read operation, COE must be high before the input
1. X means Don’t Care.
2. For a write operation following a read operation, COE0, and COE1 must be high before the input data required set–up time, and held high
STANDBY
data required set–up time and held high through the input data hold time.
through the input data hold time.
H
L
L
X
X
X
X
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
H
L
L
L
Deselected
Operation
Read
Read
Write
ADS0
H
H
H
H
L
L
L
Rating
COE0, COE1
H
X
X
L
CNTEN0
X
X
X
H
H
L
L
Data RAM
COE
H
L
X
X
(Voltages Referenced to V SS = 0 V)
CWE0 – CWE7
(See Notes 1 and 2)
Tag
CWEx
X
H
H
H
L
L
L
H
H
X
L
V in , V out
Symbol
T bias
V CC
T stg
I out
P D
T A
Data Out (DQ0 – DQ8)
CLKx
High–Z — Data In
L–H
L–H
L–H
L–H
L–H
L–H
L–H
– 0.5 to V CC + 0.5
I/O Status
– 0.5 to + 7.0
– 55 to + 125
High–Z
High–Z
– 10 to + 85
0 to +70
Value
(See Notes 1 and 2)
8.1
30
20
Output Disabled
Deselected
Operation
Read
Write
External Address
External Address
Current Address
Current Address
Address Used
Next Address
Next Address
Unit
mA
W
V
V
C
C
C
N/A
(See Notes 1, 2, and 3)
MPC2104 MPC2105 MPC2106 MPC2107
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to this high–impedance
circuit.
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established.
ensure the output devices are in High–Z at
power up.
This device contains circuitry to protect the
This BiCMOS memory circuit has been
This device contains circuitry that will
Write Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Begin Burst
Read Cycle, Begin Burst
I/O Status
Data Out
Deselected
Operation
High–Z
High–Z
High–Z
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