km684002 Samsung Semiconductor, Inc., km684002 Datasheet
km684002
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km684002 Summary of contents
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... Delete Data Retention Characteristics 3.2.Add Industrial and Extended Temperature Range parts with the same parameters as Commercial Temperature Range parts. 3.2.1 Add KM684002I for Industrial Temperature Range. 3.2.2.Add KM684002E for Extended Temperature Range. 3.2.3.Add ordering information. 3.2.4. Add the condition for operating at Industrial and Extended Temperature Range ...
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... The KM684002 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The KM684002 uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using Samsung's advanced CMOS process and designed for high-speed circuit technology ...
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... KM684002, KM684002E, KM684002I ABSOLUTE MAXIMUM RATINGS* Parameter Voltage on Any Pin Relative Voltage on V Supply Relative Power Dissipation Storage Temperature Commercial Operating Temperature Extended Industrial * Stresses greater than those listed under "Absolute Maximum Rating" may cause permanent damage to the device. This is a stress ra ting only and func- tional operation of the device at these at these or any other conditions above those indicated in the operating sections of this Exposure to absolute maximum rating conditions for extended periods may affect reliability ...
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... KM684002, KM684002E, KM684002I AC CHARACTERISTICS ( TEST CONDITIONS Parameter Input Pulse Levels Input Rise and Fall Times Input and Output timing Reference Levels Output Loads NOTE: Above test conditions are also applied at industrial temperature ranges. Output Loads(A) DOUT 255 READ CYCLE ...
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... KM684002, KM684002E, KM684002I WRITE CYCLE Parameter Write Cycle Time Chip Select to End of Write Address Set-up Time Address Valid to End of Write Write Pulse Width(OE High) Write Pulse Width(OE Low) Write Recovery Time Write to Output High-Z Data to Write Time Overlap Data Hold from Write Time End Write to Output Low-Z NOTE: Above parameters are also guaranteed at extended and industrial temperature ranges ...
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... KM684002, KM684002E, KM684002I TIMING WAVE FORM OF READ CYCLE(2) ADD CS OE Data Out Icc Vcc I SB Current NOTES(READ CYCLE high for read cycle. 2. All read cycle timing is referenced from the last valid address to the first transition address and t are defined as the time at which the outputs achieve the open circuit condition and are not referenced to V ...
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... KM684002, KM684002E, KM684002I TIMING WAVE FORM OF WRITE CYCLE(2) ADD CS WE High-Z Data In Data Out TIMING WAVE FORM OF WRITE CYCLE(3) ADD CS WE High-Z Data In High-Z Data Out (OE=Low Fixed CW(3) t AS(4) t WHZ(6) (CS=Controlled CW(3) t AS(4) t WP(2) t WHZ( PRELIMINARY CMOS SRAM ...
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... KM684002, KM684002E, KM684002I NOTES(WRITE CYCLE) 1. All write cycle timing is referenced from the last valid address to the first transition address write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE going low ; A write ends at the ear- liest transition CS going high or WE going high ...
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... KM684002, KM684002E, KM684002I PACKAGE DIMENSIONS 36-SOJ-400 #36 11.18 0.12 0.440 0.005 #1 +0.10 0.43 -0.05 +0.004 0.017 -0.002 0. 0.0375 #19 #18 23.90 MAX 0.941 23.50 0.12 0.925 0.005 +0.10 0.71 1.27 -0.05 +0.004 0.028 0.050 -0.002 - 9 - PRELIMINARY CMOS SRAM Units : Inches (millimeters) 9.40 0.25 0.370 0.010 +0.10 0.20 -0.05 +0.004 0.008 -0.002 0.69 MIN 0.027 1. 0.047 3.76 MAX 0.148 0.10 MAX 0.004 1. 0.050 Rev 3.0 ...