km68512a Samsung Semiconductor, Inc., km68512a Datasheet - Page 8
![no-image](/images/no-image-200.jpg)
km68512a
Manufacturer Part Number
km68512a
Description
64kx8 Bit Low Power Cmos Static Ram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.KM68512A.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
km68512aLG-5
Manufacturer:
SAM
Quantity:
308
Part Number:
km68512aLG-5
Manufacturer:
SEC
Quantity:
20 000
Company:
Part Number:
km68512aLG-7L
Manufacturer:
ST
Quantity:
119
Part Number:
km68512aLG-7L
Manufacturer:
SEC
Quantity:
20 000
Company:
Part Number:
km68512aLT-5
Manufacturer:
SAMSUNG
Quantity:
5 300
Company:
Part Number:
km68512aLT-5L
Manufacturer:
SAMSUNG
Quantity:
3 645
KM68512A Family
DATA RETENTION WAVE FORM
CS
CS
TIMING WAVEFORM OF WRITE CYCLE(3)
Address
CS
CS
WE
Data in
Data out
1
V
4.5V
2.2V
V
CS
GND
2
V
4.5V
CS
V
0.4V
GND
NOTES (WRITE CYCLE)
1. A write occurs during the overlap of a low CS
2. t
3. t
4. t
CC
DR
CC
DR
controlled
controlled
CS
t
applied in case a write ends as CS
WP
CW
AS
1
2
WR
1
2
2
is measured from the address valid to the beginning of write.
is measured from the begining of write to the end of write.
is measured from the CS
is measured from the end of write to the address change. t
going high and WE going low : A write end at the earliest transition among CS
1
going low or CS
2
going to low.
High-Z
t
SDR
t
t
SDR
AS(3)
1
, a high CS
2
going high to the end of write.
(CS
2
2
Controlled)
and a low WE. A write begins at the latest transition among CS
Data Retention Mode
Data Retention Mode
WR(1)
t
AW
CS1 V
t
8
t
WC
t
CW(2)
CS
CW(2)
applied in case a write ends as CS
2
t
WP(1)
CC
0.2V
- 0.2V
t
1
DW
going high, CS
Data Valid
t
WR(4)
t
DH
2
going low and WE going high,
t
RDR
High-Z
1
t
RDR
or WE going high t
CMOS SRAM
1
goes low,
January 1997
Revision 4.0
WR(2)