MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Linear Power Transistor
radio systems. This device permits the design of a Class AB push–pull, high
gain, broadband amplifier having a high degree of linearity without the need for
complicated biasing circuitry.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (2)
DYNAMIC CHARACTERISTICS (1)
FUNCTIONAL TESTS (3)
NOTE:
MOTOROLA RF DEVICE DATA
Emitter–Base Voltage
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Case (1)
Collector–Emitter Breakdown Voltage
Collector–Emitter Leakage
Emitter–Base Breakdown Voltage
Emitter–Base Leakage
DC Current Gain
Output Capacitance
Common–Emitter Amplifier Power Gain
Collector Efficiency
The TP3024B is a balanced transistor designed specifically for use in cellular
Motorola, Inc. 1994
Specified 26 Volts, 960 MHz Characteristics:
Push–Pull Configuration
(T C = 75 C)
(I C = 10 mA, R BE = 75 Ohms)
(V CE = 26 V, R BE = 75 Ohms)
(I C = 5.0 mAdc, I C = 0)
(V BE = 2.5 V)
(I C = 500 mA, V CE = 10 V)
(V CB = 24 V, I E = 0, f = 1.0 MHz)
(V CE = 26 V, P out = 35.5 W, f = 960 MHz, I Q total = 150 mA)
(V CE = 26 V, P out = 35.5 W, f = 960 MHz, I Q total = 150 mA)
1. Thermal resistance is determined under specified RF operating condition.
2. Each transistor chip measured separately.
3. Both transistor chips operating in push–pull amplifier.
Output Power = 35.5 W
Minimum Gain = 7.5 dB
I Q total = 150 mA
Characteristic
Rating
Characteristic
(T C = 25 C unless otherwise noted.)
Symbol
Symbol
V EBO
R JC
T stg
T J
– 65 to + 200
Value
Max
200
4.0
3.0
V (BR)CER
V (BR)EBO
Symbol
I CER
I EBO
G PE
h FE
C ob
c
Unit
Unit
Vdc
C/W
C
C
Min
3.5
7.5
40
15
45
—
—
—
CASE 395B–01, STYLE 1
Typ
—
—
—
—
—
17
—
—
TP3024B
UHF LINEAR POWER
35.5 W, 960 MHz
TRANSISTOR
Max
100
5.0
1.0
Order this document
25
—
—
—
—
by TP3024B/D
TP3024B
Unit
Vdc
Vdc
mA
mA
pF
dB
—
%
1