mc34152 ON Semiconductor, mc34152 Datasheet - Page 6

• Manufacturer Part Number: mc34152
• Description: High Speed Dual Mosfet Drivers
• Manufacturer: ON Semiconductor

Description
specifically designed to interface low current digital
circuitry with power MOSFETs. This device is constructed
with Schottky clamped Bipolar Analog technology which
offers a high degree of performance and ruggedness in
hostile industrial environments.
Input Stage
input threshold centered at 1.67 V. The input thresholds are
insensitive to V
with CMOS and LSTTL logic families over its entire
operating voltage range. Input hysteresis provides fast
output switching that is independent of the input signal
transition time, preventing output oscillations as the input
thresholds are crossed. The inputs are designed to accept a
signal amplitude ranging from ground to V
the output of one channel to directly drive the input of a
second channel for master−slave operation. Each input has
a 30 kW pulldown resistor so that an unconnected open
input will cause the associated Drive Output to be in a
known low state.
The MC34152 is a dual noninverting high speed driver
The Logic Inputs have 170 mV of hysteresis with the
80
60
40
20
80
60
40
20
0
0
0.1
Figure 16. Supply Current versus Input Frequency
10 k
Both Logic Inputs Driven
Both Drive Outputs Loaded
T
1 − V
2 − V
3 − V
4 − V
A
V
V
T
Figure 14. Drive Output Rise and Fall Time
50% Duty Cycle
A
0 V to 5.0 V,
CC
IN
= 25 C
= 25 C
= 0 V to 5.0 V
CC
CC
CC
CC
= 12 V
= 18 V, C
= 12 V, C
= 18 V, C
= 12 V, C
CC
C
L
versus Load Capacitance
, OUTPUT LOAD CAPACITANCE (nF)
making this device directly compatible
L
L
L
L
f, INPUT FREQUENCY (Hz)
= 2.5 nF
= 2.5 nF
= 1.0 nF
= 1.0 nF
1.0
100
t
f
t
r
1
MC34152, MC33152, NCV33152
APPLICATIONS INFORMATION
CC
2
. This allows
3
4
http://onsemi.com
1.0 M
10
6
Output Stage
sinking up to 1.5 A with a typical ‘on’ resistance of 2.4 W
at 1.0 A. The low ‘on’ resistance allows high output
currents to be attained at a lower V
comparative CMOS drivers. Each output has a 100 kW
pulldown resistor to keep the MOSFET gate low when V
is less than 1.4 V. No over current or thermal protection has
been designed into the device, so output shorting to V
ground must be avoided.
driver outputs to ring above V
transition, and below ground during the turn−off transition.
With CMOS drivers, this mode of operation can cause a
destructive output latchup condition. The MC34152 is
immune to output latchup. The Drive Outputs contain an
internal diode to V
transients. When operating with V
supply bypassing must be observed to prevent the output
ringing from exceeding the maximum 20 V device rating.
Negative output transients are clamped by the internal NPN
pullup transistor. Since full supply voltage is applied across
Each totem pole Drive Output is capable of sourcing and
Parasitic inductance in series with the load will cause the
8.0
6.0
4.0
2.0
80
60
40
20
0
0
0.1
Figure 17. Supply Current versus Supply Voltage
0
V
Both Logic Inputs Driven
Both Drive Outputs Loaded
T
T
A
CC
0 V to 5.0 V
50% Duty Cycle
A
= 25 C
= 25 C
Figure 15. Supply Current versus Drive
= 12 V
C
L
Output Load Capacitance
4.0
, OUTPUT LOAD CAPACITANCE (nF)
Low State Drive Outputs
V
CC
CC
Logic Inputs at V
, SUPPLY VOLTAGE (V)
f = 500 kHz
for clamping positive voltage
1.0
8.0
CC
CC
CC
at 18 V, proper power
High State Drive Outputs
during the turn−on
Logic Inputs Grounded
f = 200 kHz
f = 50 kHz
12
CC
than with
CC
10
CC
16
or