adg622 Analog Devices, Inc., adg622 Datasheet - Page 4

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adg622

Manufacturer Part Number
adg622
Description
Cmos ?5 V/+5 V, 4 ? Dual Spst Switches
Manufacturer
Analog Devices, Inc.
Datasheet

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ADG621/ADG622/ADG623
SINGLE SUPPLY
V
Table 2.
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
1
2
Temperature range is as follows: B Version, –40°C to +85°C.
Guaranteed by design; not subject to production test.
DD
Analog Signal Range
On Resistance, R
On Resistance Match Between Channels, ∆R
On Resistance Flatness, R
Source Off Leakage I
Drain Off Leakage I
Channel On Leakage, I
Input High Voltage, V
Input Low Voltage, V
Input Current, I
Digital Input Capacitance, C
t
t
Break-Before-Make Time Delay, t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth −3 dB
C
C
C
I
DD
ON
OFF
S
D
D
= 5 V ± 10%, V
, C
(Off)
(Off)
S
(On)
INL
ON
or I
SS
1
D
(Off)
S
= 0 V, GND = 0 V, unless otherwise noted.
INL
INH
INH
(Off)
D
, I
S
FLAT(ON)
(On)
2
IN
BBM
(ADG623 Only)
ON
+25°C
7
10
0.5
0.75
0.5
±0.01
±0.25
±0.01
±0.25
±0.01
±0.25
0.005
2
120
210
50
75
70
6
–65
–90
230
20
20
70
0.001
Rev. A | Page 4 of 12
–40°C to +85°C
0 to V
12.5
1
1.2
±1
±1
±1
2.4
0.8
±0.1
260
100
10
1.0
0.5
DD
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
pF typ
pF typ
pF typ
μA typ
μA max
Test Conditions/Comments
V
V
V
V
V
V
V
V
V
R
R
R
See
V
R
R
R
f = 1 MHz
f = 1 MHz
f = 1 MHz
V
Digital Inputs = 0 V or 5.5 V
DD
S
S
S
DD
S
S
S
IN
L
L
L
S
L
L
L
DD
= 300 Ω, C
= 0 V to 4.5 V, I
= 0 V to 4.5 V, I
= 1.5 V to 3.3 V, I
= 1 V/4.5 V, V
= 1 V/4.5 V, V
= V
= 300 Ω, C
= 300 Ω, C
= 0 V; R
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= V
= 4.5 V, V
= 5.5 V
= 5.5 V
Figure 20
D
INL
= 1 V/4.5 V, see
or V
S
= 0 Ω, C
L
L
L
L
L
L
= 5 pF, f = 1 MHz, see
= 5 pF, f = 1 MHz, see
= 5 pF, see
SS
INH
= 35 pF; V
= 35 pF; V
= 35 pF, V
= 0 V
D
D
S
S
= 4.5 V/1 V, see
= 4.5 V/1 V, see
= –10 mA, see
= −10 mA
S
L
= −10 mA
= 1 nF, see
S
S
Figure 18
= 3.3 V, see
= 3.3 V, see
S1
Figure 24
= V
S2
= 3.3 V
Figure 21
Figure 17
Figure 17
Figure 16
Figure 22
Figure 23
Figure 19
Figure 19

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