dg612dy-t1 Vishay, dg612dy-t1 Datasheet

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dg612dy-t1

Manufacturer Part Number
dg612dy-t1
Description
High-speed, Low-glitch D/cmos Analog Switches
Manufacturer
Vishay
Datasheet

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DESCRIPTION
The DG611/612/613 feature high-speed low-capacitance
lateral DMOS switches. Charge injection has been
minimized to optimize performance in fast sample-and-hold
applications.
Each switch conducts equally well in both directions when on
and blocks up to 16 V
minimized to ensure fast switching and low-glitch energy. To
achieve such fast and clean switching performance, the
DG611/612/613 are built on the Vishay Siliconix proprietary
D/CMOS process. This process combines n-channel DMOS
switching FETs with low-power CMOS control logic and
drivers. An epitaxial layer prevents latchup.
The DG611 and DG612 differ only in that they respond to
opposite logic levels. The versatile DG613 has two normally
open and two normally closed switches. It can be given
various configurations, including four SPST, two SPDT, one
DPDT.
For additional information see Applications Note AN207
(FaxBack number 70605).
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70057
S-71155–Rev. H, 11-Jun-07
GND
IN
IN
D
V-
D
S
S
1
1
1
4
4
4
1
2
3
4
5
6
7
8
Dual-In-Line
and SOIC
Top View
DG611
High-Speed, Low-Glitch D/CMOS Analog Switches
p-p
16
15
14
13
12
10
11
9
when off. Capacitances have been
IN
D
S
V+
V
S
D
IN
2
L
3
2
3
2
3
GND
NC
V-
S
S
Key
1
4
4
5
6
7
8
3
9
D
D
4
1
10
2
IN
IN
DG611
4
Top View
1
11 12 13
1
LCC
NC IN
NC IN
20
3
2
19
D
D
3
2
18
17
16
15
14
FEATURES
BENEFITS
APPLICATIONS
• Fast Switching - t
• Low Charge Injection:
• Wide Bandwidth: 500 MHz
• 5 V CMOS Logic Compatible
• Low r
• Low Quiescent Power : 1.2 nW
• Single Supply Operation
• Improved Data Throughput
• Minimal Switching Transients
• Improved System Performance
• Easily Interfaced
• Low Insertion Loss
• Minimal Power Consumption
• Fast Sample-and-Holds
• Synchronous Demodulators
• Pixel-Rate Video Switching
• Disk/Tape Drives
• DAC Deglitching
• Switched Capacitor Filters
• GaAs FET Drivers
• Satellite Receivers
S
V+
NC
V
S
2
L
3
DS(on)
Four SPST Switches per Package
Logic "0" ≤ 1 V
Logic "1" ≥ 4 V
TRUTH TABLE
: 18 Ω
Logic
0
1
ON
: 12 ns
±
2 pC
DG611/612/613
DG611
OFF
ON
Vishay Siliconix
www.vishay.com
DG612
OFF
ON
RoHS*
COMPLIANT
Available
Pb-free
1

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dg612dy-t1 Summary of contents

Page 1

... To achieve such fast and clean switching performance, the DG611/612/613 are built on the Vishay Siliconix proprietary D/CMOS process. This process combines n-channel DMOS switching FETs with low-power CMOS control logic and drivers. An epitaxial layer prevents latchup. ...

Page 2

... OFF 1 ON Logic "0" ≤ Logic "1" ≥ Part Number DG611DJ DG611DJ-E3 DG612DJ DG612DJ-E3 DG611DY DG611DY-E3 DG611DY-T1 DG611DY-T1-E3 DG612DY DG612DY-E3 DG612DY-T1 DG612DY-T1-E3 DG613DJ DG613DJ-E3 DG613DY DG613DY-E3 DG613DY-T1 DG613DY-T1-E3 Document Number: 70057 S-71155–Rev. H, 11-Jun- OFF ...

Page 3

... IN V ANALOG Document Number: 70057 S-71155–Rev. H, 11-Jun- mA, whichever occurs first or 20 mA, whichever occurs first or 20 mA, whichever occurs first DG611/612/613 Vishay Siliconix Limit Unit - (V-) - 0 ± ± 100 - 65 to 150 ° ...

Page 4

... DG611/612/613 Vishay Siliconix a SPECIFICATIONS Parameter Symbol Analog Switch e V Analog Signal Range ANALOG r Switch On-Resistance DS(on) Δr Resistance Match Bet Ch. I Source Off Leakage I Drain Off Leakage Current I Switch On Leakage Current Digital Control Input Voltage High Input Voltage Low Input Current Input Capacitance ...

Page 5

... 300 Ω OFF See Test Circuit, Figure DG611/612/613 Vishay Siliconix A Suffix D Suffix - 55 to 125 ° ° Temp Typ Min Max Min Full Room 25 60 Room ...

Page 6

... DG611/612/613 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted – Logic Supply Voltage (V) L Input Switching Threshold vs. V 400 350 300 250 200 150 25 °C 100 125 °C ...

Page 7

... Level Driver Translator Figure Logic Input ± Switch Output L Ω Figure 2. Switching Time DG611/612/613 Vishay Siliconix 100 k 100 – Frequency (Hz) Supply Currents vs ...

Page 8

... DG611/612/613 Vishay Siliconix TEST CIRCUITS + GND - 3 V Figure 3. Charge Injection APPLICATIONS High-Speed Sample-and-Hold In a fast sample-and-hold application, the analog switch characteristics are critical. A fast switch reduces aperture uncertainty. A low charge injection eliminates offset (step) errors ...

Page 9

... Figure 7. A High-Speed GaAs FET Driver that Saves Power Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 10

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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