isd1447as1 ISAHAYA ELECTRONICS CORPORRATION, isd1447as1 Datasheet
isd1447as1
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isd1447as1 Summary of contents
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... PRELIMINARY Notice: This is not a final specification Some parametric are subject to change. DESCRIPTION ISD1447AS1 is a silicon NPN epitaxial type transistor designed for 2 to 3.5W output low frequency power amplify application. Complementary with ISB1035AS1. FEATURE ●High collector current 1.5A CM ●High gain band width product. fT= 100MHz typ ● ...
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... Notice: This is not a final specification Some parametric are subject to change. TYPICAL CHARACTERISTICS COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE 1000 800 600 400 200 AMBIENT TEMPERATURE Ta(℃) FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION 120 160 200 ISAHAYA ELECTRONICS CORPORATION 〈SMALL-SIGNAL TRANSISTOR〉 ISD1447AS1 SILICON NPN EPITAXIAL TYPE ...
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Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! · ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility ...