wts772 WEITRON TECHONLOGY CO., LTD, wts772 Datasheet

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wts772

Manufacturer Part Number
wts772
Description
Pnp/npn Epitaxial Planar Transistors
Manufacturer
WEITRON TECHONLOGY CO., LTD
Datasheet
ABSOLUTE MAXIMUM RATINGS
http://www.weitron.com.tw
Device Marking
ELECTRICAL CHARACTERISTICS
NOTE: 1.PW 350us, duty cycle 2%
PNP/NPN Epitaxial Planar Transistors
Junction Temperature
Storage, Temperature
WTS772=B772 ,
Collector-Emitter Breakdown Voltage (I C = -10/10 mAdc, I B =0)
Collector-Base Breakdown Voltage (I C = -100/100 µAdc, I E =0)
Collector Cutoff Current (V CE = -30/30 Vdc, I =0)
Collector Cutoff Current (V CB = -40/40 Vdc, I E =0)
Emitter Cutoff Current (V EB = -6.0/6.0V c, I =0)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current (DC)
Collector Current (Pulse)
Total Device Dissipation T =25 C
Emitter-Base Breakdown Voltage (I E = -100/100 µAdc, I C =0)
Base Current
WEITRON
Rating
WTS882=D882
(1)
A
Characteristics
(Ta=25 C)
d
C
B
Symbol
I C(DC)
I (Pulse)
Tstg
I (Pulse)
V CBO
V EBO
V CEO
P D
T j
C
B
PNP/WTS772
V (BR)CEO
V (BR)CBO
V (BR)EBO
Symbol
-40
-5.0
-3.0
-7.0
-0.6
-30
I CBO
I EBO
I CE0
-55 to +150
0.625
1. EMITTER
2. COLLECTOR
3. BASE
150
-5.0/5.0
-40/40
-30/30
NPN/WTS882
Min
-
-
-
TO-92
WTS772
WTS882
5.0
30
40
3.0
7.0
0.6
-1.0/1.0
-1.0/1.0
-1.0/1.0
1
2
Max
3
-
-
-
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
uAdc
uAdc
uAdc
Unit
W
Vdc
Vdc
Vdc
C
C

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wts772 Summary of contents

Page 1

... Collector Current (Pulse) Base Current Total Device Dissipation T = Junction Temperature Storage, Temperature Device Marking WTS772=B772 , WTS882=D882 ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage ( -10/10 mAdc =0) Collector-Base Breakdown Voltage ( -100/100 µAdc =0) Emitter-Base Breakdown Voltage ( -100/100 µAdc =0) ...

Page 2

... WTS772 WTS882 ELECTRICAL CHARACTERISTICS Characteristics ON CHARACTERISTICS DC Current Gain ( -1.0/1.0 Adc, V CE=-2.0/2.0Vdc ) DC Current Gain ( -100/100 mAdc -2.0/2.0 Vdc) Collector-Emitter Saturation Voltage ( -2.0/2.0 Adc -0.2/0.2mAdc) Base-Emitter Saturation Voltage ( -2.0/2.0 Adc -0.2/0.2mAdc) Current-Gain-Bandwidth Product ( -0.1/0.1 mAdc =-5.0/5.0 Vdc, f=10MHz) Classification of h FE(1) ...

Page 3

... Ta-Amient Temperature- C F3. Thermal Resistance VS. Pulse Width V =10V CE I =1.0A C ° 30 Duty=0.001 0.3 0.1 0 PW-Pulse Width-ms WTS772 F5. Collector Current VS. Collector To Emitter Voltage -2.0 IB=-10mA -1.6 IB=-9mA IB=-8MA IB=-7mA -1.2 -0.8 -0 -Collector-Emitter Voltage(V) CE WEITRON http://www.weitron.com.tw 100 150 ° 100 300 1000 ...

Page 4

... =2.0V CE Puse Test WTS772 WTS882 0 =5.0V CE Forecd air Cooling (with heat sink) 0 CE(sat) BE(sat WTS772 V (sat 0.6 0.3 0.1 0.06 0.03 0.01 0.006 0.003 0.001 0.003 0.01 0.03 0.1 0 Ic-Collector Current( F10 f=1.0MHz I =0(Cob =0(Cib) C ...

Page 5

... WTS772 WTS882 TO-92 Outline Dimensions WEITRON http://www.weitron.com.tw C TO-92 Dim Min Max 3.30 3.70 A 1.10 1.40 B 0.55 0.38 C 0.36 0.51 D 4.40 4. 3.43 G 4.70 4. 1.270TYP 2.44 K 2.64 14.10 L 14.50 unit:mm ...

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