cgy121b Infineon Technologies Corporation, cgy121b Datasheet

no-image

cgy121b

Manufacturer Part Number
cgy121b
Description
Gaas Mmic
Manufacturer
Infineon Technologies Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CGY121B
Manufacturer:
ZETEX
Quantity:
150 000
Semiconductor Group
Semiconductor Group
GaAs MMIC
Preliminary Data
l Variable gain amplifier
l Gain Control range over 50dB
l Positive Control Voltage
l 50
l Low power consumption
l Operating voltage range: 2.7 to 6 V
l Frequency range 800 MHz ... 2.5 GHz
ESD: Electrostatic discharge sensitive device,
Maximum ratings
Characteristics
Drain voltage
Neg. supply voltage
Pos. control voltage
Channel temperature
Storage temperature range
Total power dissipation (TS < 81°C) 2)
Thermal resistance
Characteristics
Channel-soldering point (GND)
1)
2)
*
Siemens Aktiengesellschaft
)
Dimensions see page 9.
Please care for sufficient heat dissipation on the pcb!
Pin-out changed compared to CGY120: 180° rotation
(MMIC-Amplifier) for mobile communication
CGY 121 B
observe handling precautions!
input and output matched
Type
Marking
Y0S
1
1
1
Symbol
Symbol
R thChS
Q62702-G0071
Vcon
Ordering code
T stg
T Ch
P tot
V G
V D
(taped)
Vcontrol
-55...+150
6
150
550
125
-8
RF-GND
8
4
5
RF-in; -Vg
Vd2; RF-out
4
Package
HL HF PE GaAs/HB
CGY 121 B
MW-6
1
RF-GND
Unit
Unit
K/W
mW
°C
°C
2
1998-11-01
1998-11-01
V
V
V
1)
04.08.98
3
Vd1
*
)

Related parts for cgy121b

cgy121b Summary of contents

Page 1

GaAs MMIC Preliminary Data l Variable gain amplifier (MMIC-Amplifier) for mobile communication l Gain Control range over 50dB l Positive Control Voltage l 50 input and output matched l Low power consumption l Operating voltage range: 2 ...

Page 2

Functional block diagram: Pin / -VG(4) Vcon (6) Pin # Configuration 1 Drain voltage 2nd stage / RF-0utput VD2 / Pout 2 RF-Gnd 3 Drain voltage 1st stage VD1 4 Negative voltage at current control circuit (-4V) / RF-Input VG ...

Page 3

Electrical characteristics ( 25° 900 MHz -4V Characteristics Power Gain Vd=5V; I=70mA; Vcon=3V Input return loss Vd=5V; I=70mA; Vcon=3V Output return loss Vd=5V; I=70mA; Vcon=3V Gain Control Range ...

Page 4

Gain vs. Vcontrol and temperature Operating Conditions : Vd=3V, Vg=-4V, Id=70mA, f=900MHz, Pin=-10dBm -10 -20 -30 -40 0,0 Application Circuit f = 900 MHz Vd Input 50 Ohm C1 Siemens Aktiengesellschaft Semiconductor Group Semiconductor Group 0,5 ...

Page 5

Parts List Frequency C1, C2 (Siemens Size 0603) C3, C4 (Siemens Size 0603) C5 (Siemens Size 0603) L1 (Coilcraft 0805CS-150XKBC) L2 (Coilcraft 0805CS-270XMBC) R1 (Siemens B 54102-A1271-J60) R2 (Siemens B 54102-A1120-J60) R3 Siemens Aktiengesellschaft Semiconductor Group Semiconductor Group C1 R1 ...

Page 6

Application Circuit f = 1900 MHz Vd Input 50 Ohm C1 Siemens Aktiengesellschaft Semiconductor Group Semiconductor Group CGY121 6 2 GND CGY 121 Output ...

Page 7

Parts List Frequency C1, C2 (Siemens size 0603) C3, C4 (Siemens size 0603) C5 (Siemens size 0603) C6 (Siemens size 0603) L1 (Coilcraft 0805CS-270XKBC) R1 (Siemens B 54102-A1271-J60) R2 (Siemens B 54102-A1120-J60) R3 Total Power Dissipation Ptot = f(Ts) 700 ...

Page 8

Semiconductor Device Outline MW-6 Published by Siemens AG, Bereich Halbleiter, Marketing-Kommunikation, Balanstraße 73, D-81541 München. copyright Siemens AG 1997. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components ...

Related keywords