add8616a8a-75b ETC-unknow, add8616a8a-75b Datasheet - Page 2

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add8616a8a-75b

Manufacturer Part Number
add8616a8a-75b
Description
Double Data Rate Sdram
Manufacturer
ETC-unknow
Datasheet
Double Data Rate SDRAM
General Description
The ADD8616A8A are four-bank Double Data
Rate(DDR) Synchronous DRAMs organized as
4,194,304 words x 16 bits x 4 banks,
Synchronous design allows precise cycle control
with the use of system clock I/O transactions are
possible on every clock cycle.
Data outputs occur at both rising edges of CK and
/CK.
Range of operating frequencies, programmable
burst length and programmable latencies allow the
same device to be useful for a variety of high
bandwidth high performance memory system
applications
Ordering Information.
Pin Assignment
Rev 2 April, 2002
VDD8608A8A-75BA
A-Data
ADD8616A8A-75B
Part No.
133Mhz(7.5ns /CL=2.5)
133Mhz(7.5ns /CL=2)
Frequency
66-pin plastic TSOP II 400 mil
A10/AP
N C
D Q 3
R A S
A 1
V D D
D Q 0
N C
D Q 2
N C
V
N C
NC
V
N C
C A S
B A 1
A 0
A 2
A 3
V
V
N C
D Q 1
V
V
V
NC
N C
B A 0
N C
W E
C S
D D Q
D D
D D
D D Q
D D Q
S S Q
S S Q
2
10
11
12
13
14
15
16
1
18
19
20
30
31
32
33
1
2
3
4
5
6
7
8
9
21
22
23
24
25
26
27
28
29
7
Interface
SSTL_2
Features
•2.5V for VDDQ power supply
•SSTL_2 interface
•MRS Cycle with address key programs
•4 banks operation
•Differential clock input (CK, /CK) operation
•Double data rate interface
•Auto & Self refresh
•8192 refresh cycle
•DQM for masking
•Package:66-pins 400 mil TSOP-Type II
-CAS Latency (2, 2.5)
-Burst Length (2,4 &8)
-Burst Type (sequential & Interleave)
3 4
4 8
3 6
6
5 3
52
5 1
5 0
4 9
47
46
43
4 2
39
3 8
37
35
6
65
6
62
6 1
5 9
5 8
55
54
4 5
44
41
40
5 7
56
60
6
400mil 66pin TSOPII
3
4
4M x 16 Bit x 4 Banks
V
DQ7
V
NC
DQ6
V
NC
DQ5
V
NC
D Q 4
V
N C
N C
V
D Q S
N C
V
D M
V
CK
CK
CKE
NC
NC
A11
A9
A 8
A7
A 6
A5
A4
V
Package
R E F
S S
S SQ
D D Q
S SQ
D D Q
S S Q
S S
S S
ADD8616A8A

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