lm2941wg-883 National Semiconductor Corporation, lm2941wg-883 Datasheet - Page 5

• Manufacturer Part Number: lm2941wg-883
• Description: 1a Low Dropout Adjustable Regulator
• Manufacturer: National Semiconductor Corporation

V
Ref
Symbol
DC Drift Parameters
The following conditions apply, unless otherwise specified.
DC:
Delta calculations performed on QMLV devices at group B , subgroup 5.
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by T
junction to ambient thermal resistance), and T
θ
Note 4: The package material for these devices allows much improved heat transfer over our standard ceramic packages. In order to take full advantage of this
improved heat transfer, heat sinking must be provided between the package base (directly beneath the die), and either metal traces on, or thermal vias through,
the printed circuit board. Without this additional heat sinking, device power dissipation must be calculated using θ
not be assumed that the device leads will provide substantial heat transfer out of the package, since the thermal resistance of the lead frame material is very
poor, relative to the material of the package base. The stated θ
thermal resistance between the package base and the printed circuit board. The user must determine the value of the additional thermal resistance and must
combine this with the stated value for the package, to calculate the total allowed power dissipation for the device.
Note 5: Human body model, 1.5 kΩ in series with 100 pF.
Note 6: Functional test go-no-go only.
Note 7: Condition for V
Note 8: Limit = mV per volt of V
Note 9: %/V = % of V
Note 10: These parts are tested on a wafer by wafer basis at high and low dose rates according to MIL-STD-883 Test Method 1019 Conditions A and D with no
enhanced low dose rate sensitivity (ELDRS). Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics.
JA
or the number given in the Absolute Maximum Ratings, whichever is lower.
5V
Reference Voltage
≤
V
O
≤
IN
IN
per Volt of V
20V, V
Parameter
O
IN
.
= V
O
.
O
+5V, C
A
(ambient temperature). The maximum allowable power dissipation at any temperature is P
O
= 22µF
5mA
≤
JC
I
thermal resistance is for the package material only, and does not account for the additional
O
≤
Conditions
1A
5
Notes
Jmax
(maximum junction temperature), θ
JA
, rather than θ
Min
-25
Max
+25
JC
, thermal resistance. It must
Unit
mV
Dmax
= (T
JA
www.national.com
(package
Jmax
groups
- T
Sub-
1
A
)/