74cbtlv3245bq NXP Semiconductors, 74cbtlv3245bq Datasheet - Page 6

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74cbtlv3245bq

Manufacturer Part Number
74cbtlv3245bq
Description
74cbtlv3245 8-bit Bus Switch With Output Enable
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
Table 7.
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit see
[1]
[2]
74CBTLV3245
Product data sheet
Symbol Parameter
R
Fig 6.
ON
Typical values are measured at T
Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance is
determined by the lower of the voltages of the two (A or B) terminals.
V
IH
V
Test circuit for measuring OFF-state leakage
current (one switch)
ON resistance V
I
Resistance R
= V
V I
CC
I S
A
9.1 Test circuits
9.2 ON resistance
or GND and V
OE
Bn
ON
Conditions
see
V
see
CC
CC
I
I
I
I
I
I
V
SW
SW
SW
SW
SW
SW
CC
Figure 9
Figure 12
GND
O
= 2.3 V to 2.7 V;
= 3.0 V to 3.6 V;
= GND or V
= 64 mA; V
= 24 mA; V
= 15 mA; V
= 64 mA; V
= 24 mA; V
= 15 mA; V
amb
An
= 25 C and nominal V
to
to
Figure 11
All information provided in this document is subject to legal disclaimers.
I S
A
CC
Figure 14
I
I
I
I
I
I
= 0 V
= 0 V
= 1.7 V
= 0 V
= 0 V
= 2.4 V
.
001aan328
Rev. 1 — 30 December 2010
V O
[2]
CC
.
T
Min
amb
-
-
-
-
-
-
Fig 7.
= 40 C to +85 C
Typ
4.2
4.2
8.4
4.0
4.0
6.2
V
V
Test circuit for measuring ON-state leakage
current (one switch)
IL
I
[1]
= V
V I
CC
or GND and V
Max
I S
A
8.0
8.0
7.0
7.0
40
15
8-bit bus switch with output enable
OE
An
T
amb
74CBTLV3245
V
Min
O
CC
-
-
-
-
-
-
= 40 C to +125 C
GND
= open circuit.
Bn
© NXP B.V. 2010. All rights reserved.
Figure
001aan329
Max
15.0
15.0
60.0
11.0
11.0
25.5
V O
8.
6 of 18
Unit

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