is62vv25616ll Integrated Silicon Solution, Inc., is62vv25616ll Datasheet - Page 3

• Manufacturer Part Number: is62vv25616ll
• Description: 256k X 16 Low Voltage, 1.8v Ultra Low Power Cmos Static Ram
• Manufacturer: Integrated Silicon Solution, Inc.

IS62VV25616LL
DC ELECTRICAL CHARACTERISTICS
Notes:
1. V
CAPACITANCE
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. B
08/07/02
OPERATING RANGE
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
Symbol
V
V
V
V
I
I
Symbol
C
C
Range
Commercial
Industrial
Symbol
V
V
T
P
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
LI
LO
IL
OH
OL
IH
IL (1)
TERM
DD
STG
T
OUT
IN
(min.) = –1.0V for pulse width less than 10 ns.
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Input Capacitance
Input/Output Capacitance
(1)
Ambient Temperature
Parameter
Terminal Voltage with Respect to GND
Vdd Related to GND
Storage Temperature
Power Dissipation
–40°C to +85°C
0°C to +70°C
Test Conditions
I
I
GND V
GND V
OH
OL
(1)
= 0.1 mA
= -0.1 mA
(Over Operating Range)
IN
OUT
Conditions
V
V
OUT
IN
V
DD
V
= 0V
1-800-379-4774
= 0V
1.7V - 2.25V
1.7V - 2.25V
DD
, Outputs Disabled
V
DD
–0.2 to V
–0.2 to +2.5
–65 to +150
Value
Max.
1.0
10
8
DD
+0.25
Min.
–0.3
1.4
1.4
–1
–1
—
Unit
pF
pF
Unit
V
°C
W
V
V
DD
Max.
0.2
0.4
—
1
1
+ 0.2
ISSI
Unit
µA
µA
V
V
V
V
®
3