is42s16100-7tli Integrated Silicon Solution, Inc., is42s16100-7tli Datasheet - Page 30
is42s16100-7tli
Manufacturer Part Number
is42s16100-7tli
Description
512k Words X 16 Bits X 2 Banks 16-mbit Synchronous Dynamic Ram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet
1.IS42S16100-7TLI.pdf
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IS42S16100
30
Interval Between Read and Write Commands
A read command can be interrupted and a new write
command executed while the read cycle is in progress,
i.e., before that cycle completes. Data corresponding
to the new write command can be input at the point
new write command is executed. To prevent collision
between input and output data at the DQn pins during
this operation, the
CAS latency = 2, 3, burstlength = 4
COMMAND
U/LDQM
CLK
DQ
READ (CA=A, BANK 0)
READ A0
HI-Z
D
WRITE B0
IN
t
CCD
B0
WRITE (CA=B, BANK 0)
D
IN
B1
D
output data must be masked using the U/LDQM pins. The
interval (t
one clock cycle.
The selected bank must be set to the active state before
executing this command.
IN
B2
Integrated Silicon Solution, Inc. — www.issi.com
ccd
D
IN
) between these commands must be at least
B3
01/28/08
Rev. D
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