is42s16400f-5tli Integrated Silicon Solution, Inc., is42s16400f-5tli Datasheet - Page 3

• Manufacturer Part Number: is42s16400f-5tli
• Description: 1 Meg Bits X 16 Bits X 4 Banks 64-mbit Synchronous Dynamic Ram
• Manufacturer: Integrated Silicon Solution, Inc.

IS42S16400F, IC42S16400F
IS45S16400F
FUNCTIONAL BLOCK DIAGRAM
Integrated Silicon Solution, Inc. — www.issi.com
Rev. C
05/29/08
GENERAL DESCRIPTION
The 64Mb SDRAM is a high speed CMOS, dynamic
random-access memory designed to operate in 3.3V
memory systems containing 67,108,864 bits. Internally
configured as a quad-bank DRAM with a synchronous
interface. Each 16,777,216-bit bank is organized as 4,096
rows by 256 columns by 16 bits.
The 64Mb SDRAM includes an AUTO REFRESH MODE,
and a power-saving, power-down mode. All signals are
registered on the positive edge of the clock signal, CLK.
All inputs and outputs are LVTTL compatible.
The 64Mb SDRAM has the ability to synchronously burst
data at a high data rate with automatic column-address
generation, the ability to interleave between internal banks
to hide precharge time and the capability to randomly
change column addresses on each clock cycle during
burst access.
A self-timed row precharge initiated at the end of the burst
sequence is available with the AUTO PRECHARGE function
enabled. Precharge one bank while accessing one of the
CKE
RAS
CAS
A11
CLK
BA0
BA1
A10
WE
CS
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
GENERATOR
COMMAND
DECODER
12
CLOCK
&
ADDRESS
LATCH
ROW
8
ADDRESS BUFFER
BURST COUNTER
ADDRESS LATCH
REGISTER
MODE
COLUMN
COLUMN
12
12
CONTROLLER
COUNTER
REFRESH
REFRESH
CONTROLLER
REFRESH
ADDRESS
BUFFER
SELF
ROW
other three banks will hide the precharge cycles and provide
seamless, high-speed, random-access operation.
SDRAM read and write accesses are burst oriented starting
at a selected location and continuing for a programmed
number of locations in a programmed sequence. The
registration of an ACTIVE command begins accesses,
followed by a READ or WRITE command. The ACTIVE
command in conjunction with address bits registered are
used to select the bank and row to be accessed (BA0,
BA1 select the bank; A0-A11 select the row). The READ
or WRITE commands in conjunction with address bits
registered are used to select the starting column location
for the burst access.
Programmable READ or WRITE burst lengths consist of
1, 2, 4 and 8 locations, or full page, with a burst terminate
option.
BANK CONTROL LOGIC
12
4096
16
16
4096
4096
4096
DATA OUT
BUFFER
BUFFER
8
DATA IN
(x 16)
256K
COLUMN DECODER
SENSE AMP I/O GATE
MEMORY CELL
BANK 0
16
16
ARRAY
DQM
DQ 0-15
V
GND/GNDQ
DD
/V
DDQ
3