lh28f800bg-l Sharp Microelectronics of the Americas, lh28f800bg-l Datasheet - Page 38

• Manufacturer Part Number: lh28f800bg-l
• Description: M-bit Smartvoltage Flash Memories
• Manufacturer: Sharp Microelectronics of the Americas

6.2.7 RESET OPERATIONS
NOTES :
1. These specifications are valid for all product versions
2. If RP# is asserted while a block erase or word write
SYMBOL
t
t
t
PLPH
PLRH
235VPH
(packages and speeds).
operation is not executing, the reset will complete within
100 ns.
RY/BY# (R)
RY/BY# (R)
RP# Pulse Low Time
(If RP# is tied to V
specification is not applicable)
RP# Low to Reset during
Block Erase or Word Write
V
V
V
RP# (P)
RP# (P)
RP# (P)
CC
CC
CC
2.7 V to RP# High
3.0 V to RP# High
4.5 V to RP# High
V
CC
PARAMETER
V
V
V
V
V
V
V
V
V
V
V
2.7 V/3.3 V/5 V
OH
OL
OH
OL
IH
IL
IH
IL
IL
IH
IL
CC
, this
t
t
Fig. 14 AC Waveform for Reset Operation
PLPH
PLPH
(A) Reset During Read Array Mode
(B) Reset During Block Erase or Word Write
(C) RP# Rising Timing
Reset AC Specifications
NOTE
t
235VPH
2, 3
4
t
PLRH
V
CC
MIN.
100
100
- 38 -
= 2.7 to 3.6 V
3. A reset time, t
4. When the device power-up, holding RP#-low minimum
MAX.
22
LH28F800BG-L/BGH-L (FOR TSOP, CSP)
or RP# going high until outputs are valid.
100 ns is required after V
range and also has been in stable there.
(NOTE 1)
V
MIN.
100
100
CC
= 3.3±0.3 V
PHQV
, is required from the latter of RY/BY#
MAX.
20
CC
V
MIN.
100
100
CC
has been in predefined
= 5.0±0.5 V
MAX.
12
UNIT
ns
µs
ns