lh28f008sc Sharp Microelectronics of the Americas, lh28f008sc Datasheet - Page 8

• Manufacturer Part Number: lh28f008sc
• Description: 8m 1m ? 8 Flash Memory
• Manufacturer: Sharp Microelectronics of the Americas

LH28F008SC
BUS OPERATIONS
NOTES:
1. Refer to DC Characteristics. When V
2. X can be V
3. RY
4. RP
5. See Read Identifier Codes Command Section for read identifier code data.
6. Command writes involving block erase, write, or lock-bit configuration are reliably executed when V
7. Refer to Command Definitions Table for valid D
8
Read
Output Disable
Standby
Deep Power Down
Read Identifier Codes V
Write
V
the WSM is not busy, in block erase suspend mode (with byte write inactive), byte write suspend mode, or deep power-down mode.
Block erase, byte write, or lock-bit configuration with V
PPLK
»
»
/ BY
at GND ± 0.2 V ensures the lowest deep power-down current.
MODE
and V
»
is V
IL
OL
PPH1/2/3
or V
when the WSM is executing internal block erase, byte write, or lock-bit configuration algorithms. It is V
IH
for control pins and addresses, and V
voltages.
V
V
V
V
IH
IH
IH
IH
IH
RP
or V
or V
or V
V
or V
or V
IL
»
HH
HH
HH
HH
HH
PP
V
CE
V
V
V
V
V
PPLK
X
IH
IL
IL
IL
IL
»
IN
, memory contents can be read, but not altered.
during a write operation.
OE
V
V
V
V
X
X
IH
IH
IL
IL
IH
»
PPLK
< RP
WE
V
V
V
or V
»
V
< V
X
X
IH
IH
IH
IL
PPH1/2/3
HH
produce spurious results and should not be attempted.
See Figure 5
ADDRESS
for V
X
X
X
X
X
PP
. See DC Characteristics for
V
X
X
X
X
X
X
PP
PP
DQ
High-Z
High-Z
High-Z
Note 5
8M (1M × 8) Flash Memory
= V
D
0
D
OUT
- DQ
IN
PPH1/2/3
7
and V
RY
V
V
OH
X
X
X
X
OH
OH
»
/ BY
CC
during when
= V
»
CC1/2/3
1, 2, 3
3, 6, 7
NOTE
3
3
4
.