lh28f016sct-zr Sharp Microelectronics of the Americas, lh28f016sct-zr Datasheet - Page 30

• Manufacturer Part Number: lh28f016sct-zr
• Description: Flash Memory 16mbit 2mbitx8
• Manufacturer: Sharp Microelectronics of the Americas

6.2.3 DC CHARACTERISTICS
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
Sym.
LI
LO
CCS
CCD
CCR
CCW
CCE
CCWS
CCES
PPS
PPR
PPD
PPW
PPE
PPWS
PPES
Input Load Current
Output Leakage Current
V
V
Current
V
V
Set Lock-Bit Current
V
Clear Block Lock-Bits
Current
V
Erase Suspend Current
V
Current
V
Current
V
Lock-Bit Current
V
Clear Lock-Bit Current
V
Erase Suspend Current
CC
CC
CC
CC
CC
CC
PP
PP
PP
PP
PP
Standby or Read
Deep Power-Down
Byte Write or Set
Block Erase or
Byte Write or Block
Standby Current
Deep Power-Down
Read Current
Byte Write or
Block Erase or
Byte Write or Block
Parameter
Notes Typ.
1,3,6
1,5,6
1,7
1,7
1,2
1,7
1,7
1
1
1
1
1
1
0.1
0.1
V
20
±2
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
6
7
CC
=2.7V
DC Characteristics
Max.
±0.5
±0.5
100
±15
200
LHF16CZR
10
12
18
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2
5
Typ.
0.2
0.1
V
20
±2
10
10
7
8
1
CC
=3.3V
Max.
±0.5
±0.5
100
±15
200
200
10
12
18
17
17
12
17
17
12
40
40
15
20
20
15
2
6
5
Typ.
0.4
0.1
25
17
20
±2
10
10
⎯
⎯
⎯
⎯
1
V
CC
=5V
Max. Unit
±10
100
±15
200
200
±1
10
35
50
35
30
30
25
10
40
15
20
15
⎯
⎯
⎯
⎯
2
5
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
CMOS Inputs
V
CE#=RP#=V
TTL Inputs
V
CE#=RP#=V
RP#=GND±0.2V
I
CMOS Inputs
V
CE#=GND
f=5MHz(3.3V, 2.7V),
I
TTL Inputs
V
CE#=GND
f=5MHz(3.3V, 2.7V),
I
V
V
V
V
V
V
CE#=V
V
V
RP#=GND±0.2V
V
V
V
V
V
V
V
OUT
OUT
OUT
CC
IN
CC
OUT
CC
CC
CC
CC
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
8MHz(5V)
8MHz(5V)
=V
=3.3V±0.3V
=5.0V±0.5V
=12.0V±0.6V
=3.3V±0.3V
=5.0V±0.5V
=12.0V±0.6V
≤V
>V
=3.3V±0.3V
=5.0V±0.5V
=12.0V±0.6V
=3.3V±0.3V
=5.0V±0.5V
=12.0V±0.6V
=V
=V
=V
=V
=V
=V
=V
(RY/BY#)=0mA
=0mA
=0mA
Conditions
=V
CC
CC
CC
PPH1/2/3
CC
CC
CC
CC
CC
CC
IH
CC
Test
or GND
Max.
Max.
Max.
Max.
Max.
Max.
or GND
CC
IH
Rev. 1.2
±0.2V
27