lh28f016sc-l Sharp Microelectronics of the Americas, lh28f016sc-l Datasheet - Page 5

• Manufacturer Part Number: lh28f016sc-l
• Description: M-bit Smartvoltage Flash Memories
• Manufacturer: Sharp Microelectronics of the Americas

1 INTRODUCTION
This datasheet contains LH28F016SC-L/SCH-L
specifications. Section 1 provides a flash memory
overview. Sections 2, 3, 4, and 5 describe the
memory organization and functionality. Section 6
covers electrical specifications. LH28F016SC-L/
SCH-L flash memories documentation also includes
ordering information which is referenced in
Section 7.
1.1 New Features
The LH28F016SC-L/SCH-L SmartVoltage flash
memories maintain backwards-compatibility with the
LH28F008SA.
LH28F008SA include :
Both devices share a compatible pinout, status
register, and software command set. These
similarities enable a clean upgrade from the
LH28F008SA to LH28F016SC-L/SCH-L. When
upgrading, it is important to note the following
differences :
1.2 Product Overview
The LH28F016SC-L/SCH-L are high-performance
16 M-bit SmartVoltage flash memories organized
as 2 M-byte of 8 bits. The 2 M-byte of data is
• SmartVoltage Technology
• Enhanced Suspend Capabilities
• In-System Block Locking
• Because of new feature support, the two
• V
• To take advantage of SmartVoltage technology,
devices have different device codes. This allows
for software optimization.
support 3.3 V and 5 V block erase, byte write,
and lock-bit configuration operations. Designs
that switch V
should make sure that the V
transitions to GND.
allow V
PPLK
has been lowered from 6.5 V to 1.5 V to
PP
connection to 3.3 V or 5 V.
Key
PP
off during read operations
enhancements
PP
over
voltage
the
- 5 -
arranged in thirty-two 64 k-byte blocks which are
individually erasable, lockable, and unlockable in-
system. The memory map is shown in Fig. 1.
SmartVoltage technology provides a choice of V
and V
meet system performance and power expectations.
2.7 V V
power of 5 V V
approximately one-fourth the power of 5 V V
5 V V
V
separate 12 V converter, while V
maximizes block erase and byte write performance.
In addition to flexible erase and program voltages,
the dedicated V
protection when V
NOTE :
1. Block erase, byte write and lock-bit configuration
Internal V
matically configures the device for optimized read
and write operations.
A Command User Interface (CUI) serves as the
interface between the system processor and
internal operation of the device. A valid command
sequence written to the CUI initiates device
automation. An internal Write State Machine (WSM)
automatically executes the algorithms and timings
necessary for block erase, byte write, and lock-bit
configuration operations.
A block erase operation erases one of the device’s
64 k-byte blocks typically within 1 second (5 V V
PP
operations with V
Table 1 V
at 3.3 V and 5 V eliminates the need for a
V
PP
CC
2.7 V
CC
CC
combinations, as shown in Table 1, to
provides the highest read performance.
VOLTAGE
3.3 V
CC
5 V
consumes approximately one-fifth the
Offered by SmartVoltage Technology
(NOTE 1)
CC
and V
and V
PP
CC
CC
PP
< 3.0 V are not supported.
≤ V
PP
and 3.3 V V
pin gives complete data
PP
PPLK
LH28F016SC-L/SCH-L
detection circuitry auto-
Voltage Combinations
.
3.3 V, 5 V, 12 V
V
PP
5 V, 12 V
VOLTAGE
CC
—
PP
consumes
= 12 V
CC
. But,
CC
CC
,