lh5164avh Sharp Microelectronics of the Americas, lh5164avh Datasheet - Page 4

no-image

lh5164avh

Manufacturer Part Number
lh5164avh
Description
Manufacturer
Sharp Microelectronics of the Americas
Datasheet
LH5164AVH
READ CYCLE (T
WRITE CYCLE (T
TEST CONDITIONS
NOTE:
1. Includes scope and jig capacitance.
CAPACITANCE
NOTE:
1. This parameter is sampled and not production tested.
4
Read cycle time
Address access time
CE
CE
Output enable access time
Output hold time
CE
CE
OE Low to output in Low-Z
CE
CE
OE High to output in High-Z
Write cycle time
CE Low to end of write
Address valid to end of write
Address setup time
Write pulse width
Write recovery time
Input data setup time
Input data hold time
WE High to output in Low-Z
WE Low to output in High-Z
OE High to output in High-Z
Input pulse level
Input rise/fall time
Input/output timing level
Output load
Input capacitance
I/O capacitance
1
2
1
2
1
2
PARAMETER
access time
access time
Low to output in Low-Z
High to output in Low-Z
High to output in High-Z
Low to output in High-Z
PARAMETER
PARAMETER
PARAMETER
1
A
A
(T
SYMBOL
= –40 C to +85 C, V
= –40 C to +85 C, V
A
C
C
I/O
IN
= 25 C, f = 1 MHz)
0.2 V to V
C
SYMBOL
SYMBOL
CONDITIONS
L
t
t
t
ACE1
ACE2
t
t
t
t
t
t
t
V
t
t
t
t
t
t
t
t
t
t
OHZ
t
t
MODE
V
OLZ
HZ1
HZ2
t
OHZ
LZ1
LZ2
OW
10 ns
(100 pF)
RC
OE
OH
WC
CW
AW
WP
WR
DW
1.5 V
AA
DH
WZ
AS
I/O
IN
CC
= 0 V
= 0 V
– 0.2 V
MIN.
MIN.
200
200
180
180
150
100
10
20
20
10
20
0
0
0
0
0
0
0
0
CC
CC
MIN.
= 3.3 V 0.3 V)
= 3.3 V 0.3 V)
NOTE
1
MAX.
MAX.
200
200
200
150
60
60
40
60
40
TYP.
UNIT
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
MAX.
10
7
UNIT
pF
pF
CMOS 64K (8K
8) Static RAM

Related parts for lh5164avh