hm628511h Renesas Electronics Corporation., hm628511h Datasheet - Page 11

• Manufacturer Part Number: hm628511h
• Description: 4m High Speed Sram 512-kword X 8-bit - Hitachi Semiconductor
• Manufacturer: Renesas Electronics Corporation.

Low V
This characteristics is guaranteed only for L-version.
Parameter
V
Data retention current
Chip deselect to data
retention time
Operation recovery time
Note:
Low V
CC
0 V
V
3.0 V
V
2.2 V
CS
for data retention
CC
DR
CC
1. Typical values are at V
CC
Data Retention Timing Waveform
Data Retention Characteristics (Ta = 0 to +70 C)
t
CDR
Symbol
V
I
t
t
CCDR
CDR
R
DR
CC
= 3.0 V, Ta = +25˚C, and not guaranteed.
Min
2.0
—
0
5
V
Data retention mode
CC
Typ*
—
50
—
—
CS
1
Max
—
800
—
—
V
CC
– 0.2 V
Unit
V
ns
ms
A
Test conditions
V
(1) 0 V
(2) V
V
(1) 0 V
(2) V
See retention waveform
CC
CC
= 3 V, V
CC
CC
CS
HM628511H Series
Vin
Vin
Vin
Vin
V
CC
CC
– 0.2 V
0.2 V or
V
0.2 V or
V
CS
t
CC
CC
R
– 0.2 V
– 0.2 V
V
CC
– 0.2 V
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