ice2qr1065z Infineon Technologies Corporation, ice2qr1065z Datasheet - Page 19
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ice2qr1065z
Manufacturer Part Number
ice2qr1065z
Description
Of F -line Smps Quasi -resonant Pwm Cont Rol Ler Wi Th Integrated 650v Coolmos And Startup Cell In Dip-7
Manufacturer
Infineon Technologies Corporation
Datasheet
1.ICE2QR1065Z.pdf
(21 pages)
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Two input power curves gives typical input power versus ambient temperature are showed below;
Vin=85~265Vac(Figure
discontinuous mode flyback model which considers 115V maximum secondary to primary reflected voltage(high
priority). The calculation is based on no copper area as heatsink for the device. The input power already includes
power loss at input comman mode choke and bridge rectifier and the CoolMOS
current(I
To estimate the out power of the device, it is simply multiplying the input power at a particulary ambient
temperature with the estimated efficiency for the application. For example, a wide range input
operating temperature is 50 °C, estimated efficiency is 85%,the output power is 34.8W(41W*0.85).
Figure 12
Figure 13
Version 2.0
D_plus
Input power curve
@T
Input Power curve Vin=85~265Vac;Pin=f(T
Input Power curve Vin=230Vac;Pin=f(T
j
=125 °C) is also considered.
12) and
Vin=230Vac(Figure
a
)
19
13). The curves are derived based on a typical
a
)
®
Input power curve
. The device saturation
CoolSET
ICE2QR1065Z
voltage(Figure
April 25, 2011
®
- Q1
12),