bcr16cm-12la-a8 Renesas Electronics Corporation., bcr16cm-12la-a8 Datasheet - Page 5

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bcr16cm-12la-a8

Manufacturer Part Number
bcr16cm-12la-a8
Description
Triac Medium Power Use
Manufacturer
Renesas Electronics Corporation.
Datasheet
BCR16CM-12LA
REJ03G0298-0300
Page 5 of 6
160
140
120
100
10
10
10
10
10
10
10
80
60
40
20
Rate of Rise of Off-State Voltage (V/µs)
7
5
4
3
2
7
5
4
3
2
0
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
10
–40
10
3
2
1
0
0
1
Rate of Rise of Off-State Voltage
T
T
Gate Current Pulse Width (µs)
2
2
2 3
+ , G +
– , G – Typical Example
Junction Temperature (°C)
Distribution
Gate Current Pulse Width
2 3
Gate Trigger Current vs.
I
Breakover Voltage vs.
Junction Temperature
0
FGT I
Rev.3.00
5 7 10
Latching Current vs.
4
I Quadrant
I
5 7 10
RGT I
2
40
2 3 5 7 10
1
I
RGT III
Nov 30, 2007
T
Typical Example
Typical Example
Typical Example
Tj = 125°C
80
2
+ , G –
2 3
III Quadrant
3
2 3 5 7 10
120
4
5 7 10
160
2
4
6V
6V
Test Procedure III
6Ω
6Ω
160
140
120
100
10
10
Test Procedure I
80
60
40
20
Gate Trigger Characteristics Test Circuits
0
7
5
3
2
7
5
3
2
7
–60
1
0
10
Typical Example
Tj = 125°C
I
τ = 500µs
V
f = 3Hz
0
T
D
–40
= 4A
Commutating Current (A/ms)
Commutation Characteristics
= 200V
V
V
Minimum
Characteristics
Value
2
Junction Temperature (°C)
Rate of Decay of On-State
–20 0 20
3
A
A
Breakover Voltage vs.
Junction Temperature
5
7
330Ω
330Ω
10
1
Main Voltage
Main Current
40
2
Typical Example
60 80
III Quadrant
3
6V
6Ω
(dv/dt)c
Test Procedure II
I
T
5
710
I Quadrant
τ
100120
Time
Time
2
V
(di/dt)c
2 3
A
V
140
D
330Ω

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