m54585fp Powerex, Inc., m54585fp Datasheet

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m54585fp

Manufacturer Part Number
m54585fp
Description
8-unit 500ma Darlington Transistor Array With Clamp Diode
Manufacturer
Powerex, Inc.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M54585FP
Manufacturer:
MIT
Quantity:
20 000
DESCRIPTION
M54585P and M54585FP are eight-circuit Darlington tran-
sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments such as LEDs and lamps, and MOS-bipolar logic IC
interfaces
FUNCTION
The M54585P and M54585FP each have eight circuits,
which are NPN Darlington transistors. Input transistors have
resistance of 2.7k
killer clamping diode is provided between each output pin
and GND. Output transistor emitters are all connected to the
GND pin.
Collector current is 500mA maximum. The maximum collec-
tor-emitter voltage is 50V.
The M54585FP is enclosed in a molded small flat package,
enabling space-saving design.
POWEREX
High breakdown voltage (BV
High-current driving (Ic(max) = 500mA)
With clamping diodes
Driving available with TTL output or with PMOS IC output
Wide operating temperature range (Ta = –20 to +75 C)
between the base and input pin. A spike-
CEO
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
50V)
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
PIN CONFIGURATION
CIRCUIT DIAGRAM
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
INPUT
INPUT
INPUT
Package type 20P2N-A(FP)
Package type 18P4G(P)
The eight circuits share the COM and GND.
GND
GND
2.7K
IN1
IN2
IN3
IN4
IN5
IN6
IN7
IN8
IN1
IN2
IN3
IN4
IN5
IN6
IN7
IN8
NC
M54585P/FP
10
1
2
3
4
5
6
7
8
9
7.2K
1
2
3
4
5
6
7
8
9
3K
18
17
16
15
14
13
12
11
10
19
18
17
16
15
14
13
12
11
20
NC
O1
O2
O3
O4
O5
O6
O7
O8
COM COMMON
O1
O2
O3
O4
O5
O6
O7
O8
COM
NC : No connection
OUTPUT
OUTPUT
COMMON
GND
COM
OUTPUT
Unit :
Aug. 1999

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m54585fp Summary of contents

Page 1

... GND. Output transistor emitters are all connected to the GND pin. Collector current is 500mA maximum. The maximum collec- tor-emitter voltage is 50V. The M54585FP is enclosed in a molded small flat package, enabling space-saving design. MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54585P/FP PIN CONFIGURATION ...

Page 2

POWEREX ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted –20 ~ +75 C) Symbol Parameter V Collector-emitter voltage CEO I Collector current C V Input voltage I I Clamping diode forward current F V Clamping diode reverse voltage R P ...

Page 3

... I (2) Input-output conditions : 10V L O (3) Electrostatic capacity C includes floating capacitance at L connections and input capacitance at probes TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics 2.0 M54585P 1.5 M54585FP 1.0 0 Ambient temperature Ta (°C) Duty-Cycle-Collector Characteristics (M54585P) 500 400 300 200 •The collector current values represent the current per circuit ...

Page 4

... Ta = 75°C 100 (V) I M54585P/FP Duty-Cycle-Collector Characteristics (M54585FP) •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75° 100 Duty cycle (%) ...

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