ncp5361 ON Semiconductor, ncp5361 Datasheet - Page 5

• Manufacturer Part Number: ncp5361
• Description: 4.0 A Synchronous Buck Power Mosfet Driver
• Manufacturer: ON Semiconductor

2. AC Specifications are guaranteed by characterization, and not production tested.
ELECTRICAL CHARACTERISTICS (continued)
unless otherwise noted.)
PACKAGE PIN DESCRIPTION
AC OPERATING SPECIFICATIONS
High−Side Driver
Low−Side Driver
Undervoltage Lockout
Pin Number
Rise Time
Fall Time
Propagation Delay Time,
Propagation Delay Time,
Rise Time
Fall Time
Propagation Delay Time,
Propagation Delay Time,
V
V
S
S
TG Going High
(Nonoverlap Time)
TG Going Low
BG Going High
(Non−Overlap Time)
BG Going Low
Rising
Falling
1
2
3
4
5
6
7
8
Parameter
Pin Symbol
PGND
DRN
BST
CO
TG
EN
BG
V
S
tpdh
tpdl
Symbol
tpdh
tpdh
tpdl
tpdl
tr
tf
tr
tf
TG
TG
BG
BG
UVLO
The switching node common to the high and low−side FETs. The high−side (TG) driver and supply
(BST) are referenced to this pin.
Driver output to the high−side MOSFET gate.
Bootstrap supply voltage input. In conjunction with a Schottky diode to V
capacitor connected between BST and DRN develops supply voltage for the high−side driver (TG).
Logic level control input produces complementary output states − no inversion at TG; inversion at BG.
Logic level enable input forces TG and BG low, and supply current to 10 mA when EN is low.
Power supply input. A 0.1 mF to 1.0 mF ceramic capacitor should be connected from this pin to PGND.
Driver output to the low−side (synchronous rectifier) MOSFET gate.
Ground.
UVLO
TG
BG
TG
BG
V
V
V
V
T
T
T
T
EN = V
EN = V
J
J
J
J
BST
BST
BST
BST
4.0 V to 4.5 V, time to BG > 1.0 V, T
4.5 V to 4.0 V, time to BG < 1.0 V, T
= 125°C (Note 2)
= 125°C (Note 2)
= 125°C (Note 2)
= 125°C (Note 2)
− V
− V
− V
− V
S
S
, CO = 0 V, dV
, CO = 0 V, dV
DRN
DRN
DRN
DRN
(0°C < T
= 5.0 V, T
= 5.0 V, T
= 5.0 V, T
= 5.0 V, T
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Test Conditions
J
S
S
< 125°C; V
J
J
J
J
/dt > 1.0 V/ms, from
/dt < −1.0 V/ms, from
= 125°C (Note 2)
= 125°C (Note 2)
= 125°C (Note 2)
= 125°C (Note 2)
5
S
= 5.0 V; 4.0 V < V
Description
J
J
= 125°C
= 125°C
BST
Min
10
10
−
−
−
−
−
−
−
−
< 25 V; V
S
, a 0.1 mF to 1.0 mF ceramic
Typ
250
8.0
8.0
8.0
8.0
25
14
19
14
38
EN
= V
S
, C
LOAD
Max
15
20
45
20
15
20
35
20
−
−
= 3.0 nF;
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms