bts3134 Infineon Technologies Corporation, bts3134 Datasheet

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bts3134

Manufacturer Part Number
bts3134
Description
Smart Low Side Power Switch Power Hitfet Bts 3134d
Manufacturer
Infineon Technologies Corporation
Datasheet

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Part Number:
bts3134D
Manufacturer:
INF
Quantity:
225
Part Number:
bts3134D
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Part Number:
bts3134DATMA1
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Part Number:
bts3134N
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Datasheet
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown
• Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Application



General Description
N channel vertical power FET in Smart SIPMOS
protection functions.
All kinds of resistive, inductive and capacitive loads in switching
µC compatible power switch for 12 V DC applications
Replaces electromechanical relays and discrete circuits
or linear applications
Pin 1
In
HITFET
ESD
Gate-Driving
Unit
Overload
Protection
Current
Limitation
Over-
temperature
Protection
Overvoltage-
Protection
Short circuit
Protection
1
Product Summary
Drain source voltage
On-state resistance
Nominal load current
Clamping energy

technology. Fully protected by embedded
Smart Low Side Power Switch
Source
Drain
Power HITFET BTS 3134D
Pin 2 and 4 (TAB)
V
Pin 3
bb
V
R
I
E
D(Nom)
P / PG-TO252-3-11
DS
AS
DS(on)
Rev. 1.3, 2006-12-22
3.5
42
50
3
M
V
m
A
J

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bts3134 Summary of contents

Page 1

Features · Logic Level Input · Input Protection (ESD) · Thermal shutdown • Green product (RoHS compliant) · Overload protection · Short circuit protection · Overvoltage protection · Current limitation · Analog driving possible Application All kinds of resistive, inductive ...

Page 2

Maximum Ratings Parameter Drain source voltage Drain source voltage for short circuit protection T = -40...150°C j Continuous input current V -0.2V 10V IN V < -0. > 10V IN IN Operating temperature Storage temperature ...

Page 3

Electrical Characteristics Parameter 25°C, unless otherwise specified j Characteristics Drain source clamp voltage ...+ 150 Off-state drain current ...

Page 4

Electrical Characteristics Parameter 25°C, unless otherwise specified j Dynamic Characteristics V to 90% I Turn-on time 4 10% I Turn-off time IN ...

Page 5

Block diagram Terms HITFET Input circuit (ESD protection) Input Datasheet Inductive and overvoltage output clamp Short circuit behaviour V IN Gate Drive ...

Page 6

Maximum allowable power dissipation P = f(T ) resp. tot f =55 K/W tot A thJA SMD @ 6cm2 1.5 1 0.5 0 -50 - On-state ...

Page 7

Typ. transfer characteristics I =f =12V Jstart Typ. output characteristics I =f =25° Jstart Parameter: ...

Page 8

Typ. overload current I = f(t heatsink D(lim) bb Parameter: T jstart 40 A -40°C 30 25°C 25 85° 150° Determination of I D(lim ...

Page 9

Package Outlines 0.15 MAX. per side 4.57 Figure 1 PG-TO252-3-11 (Plastic Dual Small Outline Package) (RoHS-Compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a ...

Page 10

Revision History Version Date Changes Rev. 1.3 2006-12-22 released automotive green and robust version (BTS) Package parameter (humidity and climatic) removed in Maximum ratings Rev. 1.2 2006-12-11 AEC icon added RoHS icon added Green product (RoHS-compliant) added to the ...

Page 11

Edition 2006-12-22 Published by Infineon Technologies AG 81726 Munich, Germany Infineon Technologies AG 2007. © All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). ...

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