bts721-l1 Infineon Technologies Corporation, bts721-l1 Datasheet

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bts721-l1

Manufacturer Part Number
bts721-l1
Description
Smart Four Channel Highside Power Switch
Manufacturer
Infineon Technologies Corporation
Datasheet
Smart Four Channel Highside Power Switch
Features
Application
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
1
Semiconductor Group
)
Overload protection
Current limitation
Short-circuit protection
Thermal shutdown
Overvoltage protection
Fast demagnetization of inductive loads
Reverse battery protection
Undervoltage and overvoltage shutdown
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of V
Electrostatic discharge (ESD) protection
for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitive loads
Replaces electromechanical relays and discrete circuits
(including load dump)
with auto-restart and hysteresis
C compatible power switch with diagnostic feedback
Pin
1,10,
11,12,
15,16,
19,20
3
5
7
9
18
17
14
13
4
8
2
6
Pin Definitions and Functions
With external current limit (e.g. resistor R
connection, reverse load current limited by connected load.
Symbol Function
V
IN1
IN2
IN3
IN4
OUT1
OUT2
OUT3
OUT4
ST1/2
ST3/4
GND1/2 Ground 1/2 of chip 1 (channel 1 and channel 2)
GND3/4 Ground 3/4 of chip 2 (channel 3 and channel 4)
bb
Positive power supply voltage. Design the
Input 1 .. 4, activates channel 1 .. 4 in case of
Output 1 .. 4, protected high-side power output
Diagnostic feedback 1/2 of channel 1 and
Diagnostic feedback 3/4 of channel 3 and
wiring for the simultaneous max. short circuit
currents from channel 1 to 4 and also for low
thermal resistance
logic high signal
of channel 1 .. 4. Design the wiring for the
max. short circuit current
channel 2, open drain, low on failure
channel 4, open drain, low on failure
1 )
bb
protection
Product Summary
GND
Current limitation
Operating voltage
Overvoltage Protection
On-state resistance R
Nominal load current I
=150 ) in GND connection, resistor in series with ST
1 of 15
technology. Providing embedded protective functions.
active channels:
I
L(NOM)
L(SCr)
ON
P-DSO-20
GND1/2 2
GND3/4 6
V
V
one
100
2.9
PROFET ®
Pin configuration
ST1/2 4
ST3/4 8
bb(AZ)
bb(on)
8
V
IN1 3
IN2 5
IN3 7
IN4 9
V
bb
bb
two parallel four parallel
1
10
4.3
50
8
5.0 ... 34
(top view)
BTS721L1
20 V
19 V
18 OUT1
17 OUT2
16 V
15 V
14 OUT3
13 OUT4
12 V
11 V
2003-Oct-01
6.3
25
8
43
bb
bb
bb
bb
bb
bb
m
V
V
A
A

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bts721-l1 Summary of contents

Page 1

... On-state resistance R 100 ON Nominal load current I 2.9 L(NOM) I Current limitation L(SCr) P-DSO-20 technology. Providing embedded protective functions. GND1/2 2 GND3/4 6 =150 ) in GND connection, resistor in series with ST GND PROFET ® BTS721L1 43 V bb(AZ) 5.0 ... 34 V bb(on) two parallel four parallel 4.3 6 Pin configuration ...

Page 2

... Charge Gate 2 Current pump 2 protection limit 2 Level shifter Limit for unclamped Rectifier 2 Temperature ind. loads 2 sensor 2 Open load Short to Vbb detection 2 2 BTS721L1 + V bb Leadframe Channel 1 18 OUT1 Channel 2 17 OUT2 Load GND1/2 Load GND + V bb Leadframe Channel 3 ...

Page 3

... GND and status pins, e.g. with a bb(AZ) 2 (one layer thick) copper area for BTS721L1 Symbol Values self-limited ...

Page 4

... T =-40...+150° bb(o rst) T =-40...+150° bb(over) T =-40...+150° bb(AZ) T =25° bb(off) T =150° 5.6 V typ without charge pump BTS721L1 Values min typ max -- 85 100 170 200 2.5 2.9 -- 3.8 4.3 5.9 6 200 400 80 200 400 0 ...

Page 5

... T =-40°C: t j,start off(SC 25°C: j,start 11) V ON(CL > out BTS721L1 Values min typ max -- -- -- twice the current of one channel four times the current of one channel -- ...

Page 6

... I IN IN(off IN(on) t d(ST OL4) T =-40..+150° d(ST OL5) T =-40..+150° d(ST) T =-40..+150° +1.6 mA ST(high) = +1.6 mA ST(low) = +1.6 mA BTS721L1 Values min typ max 20 -- 400 300 20 -- 300 twice the current of one channel 2.5 3.5 1.7 -- 3.5 1 0.5 IN( ...

Page 7

... ON2 OUT1 ST3/4 OUT2 V IN3 V IN4 V ST3/4 V OUT1 V OUT2 I GND1 150 GND1/2 GND3/4 in the off state causes an internal current from output to ground BTS721L1 OUT2 ST1/2 OUT4 ST3/4 BTS 721L1 H ...

Page 8

... GND +5V Reverse battery protection ST ESD < 380 ST(ON 150 GND +V bb Temperature protection is not active during inverse current operation OUT Power GND 8 BTS721L1 Logic GND Signal GND = 47 V typ 3.5 k typ ± 5V Logic ...

Page 9

... Consider at your PCB layout that in the case of Vbb dis- connection with energized inductive load the whole load current flows through the GND connection. OUT1 OUT IN IN(T+) 9 BTS721L1 V bb IN1 OUT1 V IN1 PROFET IN2 V OUT2 IN2 ...

Page 10

... j,start = 150° [mH] 10000 1000 100 Semiconductor Group Load OUT · i (t) dt, ON(CL · ( OUT(CL [A] 10 BTS721L1 2003-Oct-01 ...

Page 11

... Typ. initial short circuit shutdown time j,start ); V off(SC) t [msec] off(SC) 4 -40°C 3.5 3 25°C 2.5 2 85° 150°C 1.5 1 0 BTS721L1 ); V = 9... 1...4 = low 100 150 = 100 150 T j,start 2003-Oct-01 200 T [°C] j 200 [°C] ...

Page 12

... Figure 3a: Turn on into short circuit: shut down by overtemperature, restart by cooling IN1 other channel: normal operation L(SCp) t off(SC Heating up of the chip may require several milliseconds, depending on external conditions (t off(SC) vs. T j,start see page 12) 12 BTS721L1 t I L(SCr) t 2003-Oct-01 ...

Page 13

... Figure 5b: Open load: detection in ON-state, turn on/off to open load IN1 IN2 channel 2: normal operation V OUT1 I L1 channel 1: open load t d(ST The status delay time t d(STOL4) failure modes "open load in ON-state" and "overtemperature". 13 BTS721L1 open normal load load d(ST OL1) d(ST OL2) d(ST OL2 typ d(ST OL2 d(ST OL4) ...

Page 14

... Semiconductor Group Figure 6b: Undervoltage restart of charge pump bb(under) d(ST OL5) d(ST high, normal load conditions. Charge pump starts at V Figure 7a: Overvoltage bb(u cp) V bb(u rst) V OUT BTS721L1 V ON(CL) V bb(over bb(o rst) bb(u rst) V bb(u cp) = 5.6 V typ. bb(ucp bb(over) ON(CL) 2003-Oct- bb(o rst) t ...

Page 15

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. thja 15 BTS721L1 2003-Oct-01 ...

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