ncv8460dr2g ON Semiconductor, ncv8460dr2g Datasheet - Page 3

• Manufacturer Part Number: ncv8460dr2g
• Description: Self Protected High Side Driver With Temperature Shutdown And Current Limit
• Manufacturer: ON Semiconductor

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Not subjected to production testing
2. Reverse Output current has to be limited by the load to stay within absolute maximum ratings and thermal performance.
MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
DC Supply Voltage
Peak Transient Input Voltage
(Load Dump 51.5 V, V
Input Voltage
Input Current
Output Current (Note 2
Negative Ground Current
Status Current
Power Dissipation Tc = 25°C
Electrostatic Discharge
(HBM Model 100 pF / 1500 W)
Single Pulse Inductive Load Switching Energy (Note 1)
(L = 1.8 mH, V
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Junction−to−Lead
Junction−to−Ambient (min. Pad)
Junction−to−Ambient (1” square pad size, FR−4, 1 oz Cu)
Input
Status
Output
V
D
bat
= 13.5 V; I
D
)
= 13.5 V, ISO7637−2 pulse 5)
L
= 9 A, T
Parameter
Rating
Jstart
= 150°C
http://onsemi.com
3
Symbol
Symbol
T
V
I
−I
storage
R
R
R
status
E
P
V
I
V
peak
T
I
out
qJL
qJA
qJA
gnd
AS
in
tot
in
D
J
−200
Min
−16
100
−40
−55
3.5
−8
−5
−6
−5
4
5
5
Max Value
Value
1.183
105.6
110.8
72
Internally
Limited
+150
+150
Max
42
65
8
5
−
5
°C/W
°C/W
°C/W
Unit
Unit
DC
mA
mA
mA
mJ
kV
kV
kV
kV
°C
°C
W
V
V
V
A