btn7960 Infineon Technologies Corporation, btn7960 Datasheet - Page 10

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btn7960

Manufacturer Part Number
btn7960
Description
High Current Pn Half Bridge Novalithic?
Manufacturer
Infineon Technologies Corporation
Datasheet

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5.2
The power stages of the BTN7960 consist of a p-channel vertical DMOS transistor for the high side switch and a
n-channel vertical DMOS transistor for the low side switch. All protection and diagnostic functions are located in a
separate top chip. Both switches can be operated up to 25 kHz, allowing active freewheeling and thus minimizing
power dissipation in the forward operation of the integrated diodes.
The on state resistance
typical on state resistance characteristics are shown in
Figure 6
Data Sheet
High Side Switch
20
25
10
15
5
4
Power Stages
Typical ON State Resistance vs. Supply Voltage (BTN7960B)
8
12
R
ON
is dependent on the supply voltage
16
20
T
T
T
j
j
j
= 150°C
= 25°C
= -40°C
24
V
S
[V]
28
10
Figure
Low Side Switch
20
25
10
6.
15
5
V
4
S
as well as on the junction temperature
Block Description and Characteristics
8
High Current PN Half Bridge
12
16
20
T
Rev. 1.1, 2007-11-21
T
T
j
j
j
= 150°C
= 25°C
= -40°C
24
V
S
BTN7960
[V]
28
T
j
. The

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