btn7970 Infineon Technologies Corporation, btn7970 Datasheet - Page 22
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btn7970
Manufacturer Part Number
btn7970
Description
High Current Pn Half Bridge Novalithic?
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BTN7970.pdf
(28 pages)
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6
Note: The following information is given as a hint for the implementation of the device only and shall not be
6.1
Figure 14
Note: This is a simplified example of an application circuit. The function must be verified in the real application.
6.2
Due to the fast switching times for high currents, special care has to be taken to the PCB layout. Stray inductances
have to be minimized in the power bridge design as it is necessary in all switched high power bridges. The
BTN7970 has no separate pin for power ground and logic ground. Therefore it is recommended to assure that the
offset between the ground connection of the slew rate resistor, the current sense resistor and ground pin of the
device (GND / pin 1) is minimized. If the BTN7970 is used in a H-bridge or B6 bridge design, the voltage offset
between the GND pins of the different devices should be small as well.
A ceramic capacitor from VS to GND close to each device is recommended to provide current for the switching
phase via a low inductance path and therefore reducing noise and ground bounce. A reasonable value for this
capacitor would be about 470 nF.
The digital inputs need to be protected from excess currents (e.g. caused by induced voltage spikes) by series
resistors in the range of 10 kΩ.
Data Sheet
regarded as a description or warranty of a certain functionality, condition or quality of the device.
470Ω
R
IS12
I/O
10kΩ
XC866
R
Application Information
Application Example
Application Example: H-Bridge with two BTN7970
Layout Considerations
0..51k Ω
IN1
Microcontroller
R
I/O
SR1
10kΩ
R
INH1
I/O
BTN7970
I/O
INH
IN
IS
SR
Reset
Vdd
Vss
I/O
22µF
C
Q
GND
OUT
VS
47nF
High Current H-Bridge
C
D
C
470nF
Voltage Regulator
Sc1
WO
RO
Q
D
22
M
4278G
470nF
GND
TLE
C
Sc2
I
VS
OUT
GND
High Current PN Half Bridge
470µF
C
BTN7970
S
10V
Reverse Polarity
D
1kΩ
Z 1
R
INH
1
SR
Application Information
IN
IS
Protection
100P03P3L
Rev. 1.1, 2007-11-21
R
10kΩ
IPB
-04
INH2
R
0..51k Ω
SR2
BTN7970
V
R
10k Ω
IN2
S