a6a50xx AEGIS SEMICONDUTORES LTDA, a6a50xx Datasheet - Page 2

• Manufacturer Part Number: a6a50xx
• Description: Diode Modules
• Manufacturer: AEGIS SEMICONDUTORES LTDA

Fig. 1 - Current Ratings Characteristics
150
145
140
135
130
125
120
115
110
105
100
95
90
*Sinusoidal waveform
0
V
V
V
r
r
I
R
junction-to-case
R
case-to-sink
wt Weight
Case Style
CHARACTERISTICS
RM
F1
F2
FM
F(TO)1
F(TO)2
thJC
thCS
Low-level resistance
High-level resistance
Peak reverse current
SEMICONDUTORES LTDA.
Peak forward voltage
Thermal resistance,
Thermal resistance,
AEGIS
Maximum Allowable Case Temperature
Low-level threshold
High-level threshold
10
PARAMETER
Average Forward Current (A)
30º
20
60º
30
MIN.
---
---
---
---
---
---
---
---
---
90º
10(0.36)
Press-fit
40
TYP.
120º
---
---
---
---
---
---
---
---
A6A:50.XX
180º
MAX. UNITS
50
1.30
0.71
0.93
7.20
3.60
6.00
0.85
0.55
---
g(oz.)
O
O
m
C/W
C/W
mA
V
V
---
Initial T
T
Av. power = V
Use low values for I
T
DC operation
Mtg. Surface smooth, flat and greased. Single side.
J
J
Fig. 2 - Current Ratings Characteristics
= 180 C
= 180 C. Max. Rated V
150
140
130
120
110
100
90
*Rectangular waveform
J
O
= 25 C, sinusoidal wave, I
O
0
O
5
F(TO)
10 15 20 25 30 35 40 45 50 55 60 65 70 75
TEST CONDITIONS
* I
Maximum Allowable Case Temperature
FM
F(AV)
< I
Average Forward Current (A)
+r
RRM
---
F(AV)
30º
---
F
* [I
F(RMS)
60º
peak
]
2
= 157A.
90º
120º
180º
DC