lp8765rlx National Semiconductor Corporation, lp8765rlx Datasheet - Page 14

• Manufacturer Part Number: lp8765rlx
• Description: High Performance Power Management Unit For Handset Applications
• Manufacturer: National Semiconductor Corporation

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V
V
V
I
I
V
I
V
C
T
CHG
PREEQUAL
EOC
REG
CHG_IN
OK_CHG
TERM
FULL_RATE
RESTART
Symbol
BATT
Unless otherwise noted, V
=0V, C
pearing in normal type apply for T
operation, T
VIN_CHG
AC wall adapter input voltage
operating range
CHG_IN OK Trip Point
Battery charging termination
Voltage
CHG_IN programmable full-
rate charging current
Full-rate charging current
tolerance
Pre-charging current
Full-rate qualification
threshold
End-of-charge current, % of
full-rate current
Restart threshold voltage
Capacitance on BATT
Regulated junction
temperature
J
= −40°C to +125°C.
=C
VIN_B
Parameter
1=C
BATT
VIN_B2
(=V
=C
(Note
J
VIN1
=25°C. Limits appearing in boldface type apply over the entire junction temperature range for
BUCK
=V
1=C
6,
CHARGER ELECTRICAL CHARACTERISTICS
VIN2
V
V
V
V
I
6.8V
V
V
I
2.2V < V
V
full-rate charging
0.1C option selected
From V
selected)
(Note
(Note
CHG
CHG
Note
CHG_IN
CHG_IN
TERM
TERM
BATT
FULLRATE
BATT
BUCK2
=V
current
= 400 mA
≥
VIN3
9)
7)
7)
< V
rising, transition from pre-charging to
= 4.2V, I
is measured at 10% of the programmed
TERM
V
= C
BATT
CHG
=V
CHG-IN
< V
VIN1
VIN_B1
voltage (4.2V - 100 mV option
≥
< V
BATT
=C
CHG
4.5V
- V
Conditions
FULL_RATE
=V
VIN2
< V
OK_CHG
= 50 mA
VIN_B2
=10 μF, C
14
TERM
) =3.7V, GND (=GND_B1=GND_B2=GND_LDO=GND_SINK)
(Note
LDOx
10)
=C
VTRM
=C
COIN
−100
Typ
150
115
=1μF. Typical values and limits ap-
2.8
40
50
10
−0.35
Min
−10
−70
4.5
2.7
−1
50
20
30
Limit
+0.35
1200
−130
1000
Max
+10
6.7
2.9
+1
80
Units
mV
mA
mA
mV
µF
°C
%
%
%
V
V