ap2012p3c Kingbright USA Corporation, ap2012p3c Datasheet

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... Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. Specifications are subject to change without notice. SPEC NO: DSAF1594 APPROVED PHOTOTRANSISTOR AP2012P3C Description Made with NPN silicon phototransistor chips. REV NO: V.2 DATE: MAR/29/2005 CHECKED: Allen Liu DRAWN: B.H.LI PAGE ...

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Electrical / Optical Characteristics at T Symbol Parameter V Collector-to-Emitter Breakdown Voltage BR CEO V Emitter-to-Collector Breakdown Voltage BR ECO V Collector-to-Emitter Saturation Voltage CE (SAT) I Collector Dark Current CEO T Rise Time (10％ to 90％ ...

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... AP2012P3C Recommended Soldering Pattern (Units : mm) Tape Specifications (Units : mm) SPEC NO: DSAF1594 APPROVED REV NO: V.2 DATE: MAR/29/2005 CHECKED: Allen Liu DRAWN: B.H.LI PAGE ERP:1203000140 ...

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... AP2012P3C SPEC NO: DSAF1594 APPROVED REV NO: V.2 DATE: MAR/29/2005 CHECKED: Allen Liu DRAWN: B.H.LI PAGE ERP:1203000140 ...