ap15n03gp ETC-unknow, ap15n03gp Datasheet

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ap15n03gp

Manufacturer Part Number
ap15n03gp
Description
N-channel Enhancement Mode Power Mosfet
Manufacturer
ETC-unknow
Datasheet
▼ ▼ ▼ ▼ Low Gate Charge
▼ ▼ ▼ ▼ Simple Drive Requirement
▼ ▼ ▼ ▼ Fast Switching
▼ ▼ ▼ ▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-case
Rthj-amb
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-
industrial applications and suited for low voltage applications such as
DC/DC converters and high efficiency switching circuit.
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
D
S
GS
GS
@ 10V
@ 10V
TO-220
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
Pb Free Plating Product
-55 to 150
-55 to 150
Rating
BV
R
I
± 20
D
0.22
30
15
50
28
DS(ON)
9
DSS
G
Value
4.5
62
AP15N03GP
200722051-1/6
80mΩ
D
S
Units
W/℃
Units
℃/W
℃/W
30V
15A
W
V
V
A
A
A

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ap15n03gp Summary of contents

Page 1

... Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G D TO-220 S Parameter @ 10V GS @ 10V GS 1 Parameter AP15N03GP Pb Free Plating Product BV 30V DSS R 80mΩ DS(ON) I 15A Rating Units 30 ± 20 ...

Page 2

... AP15N03GP Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge ...

Page 3

... Fig 2. Typical Output Characteristics 1.8 I = =10V 1 = 1.4 1.2 1 0.8 0.6 - Fig 4. Normalized On-Resistance AP15N03GP =10V G V =8. =6. =4. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature ...

Page 4

... AP15N03GP Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 100 = Single Pulse (V) DS Fig 7. Maximum Safe Operating Area 100 125 150 10us 0.1 100us 1ms 10ms 100ms 0.01 0.00001 100 Fig 8. Effective Transient Thermal Impedance ...

Page 5

... 0.1 0.1 0.3 0.5 0.7 0.9 V (V) SD Fig 11. Forward Characteristic of Reverse Diode 1000 100 Fig 10. Typical Capacitance Characteristics -50 1.1 1.3 1.5 Fig 12. Gate Threshold Voltage v.s. AP15N03GP f=1.0MHz Ciss Coss Crss ( 100 Junction Temperature Junction Temperature 31 150 5/6 ...

Page 6

... AP15N03GP Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit THE DS OSCILLOSCOPE 0.5x RATED THE OSCILLOSCOPE 5V 0.8 x RATED d(off) d(on) r Fig 14. Switching Time Waveform ...

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