si7613dn Vishay, si7613dn Datasheet

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si7613dn

Manufacturer Part Number
si7613dn
Description
P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si7613dn-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si7613dn-T1-GE3
0
Company:
Part Number:
si7613dn-T1-GE3
Quantity:
3 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
f. Based on T
Document Number: 64809
S09-0662-Rev. A, 20-Apr-09
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
PRODUCT SUMMARY
Ordering Information: Si7613DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
- 20
(V)
8
3.30 mm
D
C
7
0.0087 at V
= 25 °C
0.014 at V
D
6
R
D
PowerPAK 1212-8
DS(on)
Bottom V ie w
5
D
GS
GS
(Ω)
= - 4.5V
= - 10 V
J
= 150 °C)
1
S
2
P-Channel 20-V (D-S) MOSFET
S
3
I
S
D
- 35
- 35
3.30 mm
(A)
4
G
e,f
c, d
A
Q
= 25 °C, unless otherwise noted
28.1 nC
g
(Typ.)
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Low Thermal Resistance PowerPAK
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Load Switch
• Adaptor Switch
• Notebook PC
Definition
Package with Small Size and Low 1.07 mm
Profile
Symbol
T
J
V
V
I
P
, T
DM
I
I
GS
DS
D
S
D
g
stg
Tested
®
Power MOSFET
G
- 50 to 150
- 13.6
- 3.2
P-Channel MOSFET
- 17
3.8
2.4
Limit
- 35
- 35
- 35
± 16
52.1
33.3
- 20
- 60
260
a, b
a, b
a, b
a, b
e
e
a, b
e
Vishay Siliconix
S
D
®
Si7613DN
www.vishay.com
Unit
°C
W
V
A
1

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si7613dn Summary of contents

Page 1

... Bottom Ordering Information: Si7613DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7613DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 81 °C/W. SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient ...

Page 3

... Document Number: 64809 S09-0662-Rev. A, 20-Apr-09 25 °C, unless otherwise noted 1.0 0.8 0 0.4 0.2 0 4000 3000 2000 1000 1.6 1.4 1.2 1.0 0.8 0 Si7613DN Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... Si7613DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.9 1 250 µA D 1.3 1.0 0 Temperature (°C) J Threshold Voltage 100 Limited by R 0.1 0.01 www.vishay.com 4 0.04 0. °C J 0.02 0.01 0.00 0.9 1 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.0 1.5 1.0 0.5 0.0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7613DN Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si7613DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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