mc9s08ll64 Freescale Semiconductor, Inc, mc9s08ll64 Datasheet - Page 39

• Manufacturer Part Number: mc9s08ll64
• Description: 8-bit Hcs08 Central Processor Unit
• Manufacturer: Freescale Semiconductor, Inc

3.14
3.15
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see the Memory section.
Freescale Semiconductor
1
2
No.
1
2
3
4
5
6
7
8
9
No.
10
11
V
VSUPPLY = 10, BYPASS = 0
1
2
3
4
5
6
7
8
9
IREG
Max can not exceed V
C
D
D
D
D
D
D
D
D
D
LCD Specifications
Flash Specifications
C
D
D
D
D
P
P
P
P
D
LCD supply voltage
LCD frame frequency
LCD charge pump capacitance
LCD bypass capacitance
LCD glass capacitance
V
V
V
V
IREG
IREG
IREG
LCD
Supply voltage for program/erase
–40 °C to 85 °C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Byte program current
buffered adder
trim resolution
ripple
Characteristic
Characteristic
DD
2
2
2
–.15 V
3
MC9S08LL64 Series MCU Data Sheet, Rev. 4
Table 20. LCD Electricals, 3-V Glass
1
Table 21. Flash Characteristics
2
HRefSel = 0
HRefSel = 1
HRefSel = 0
HRefSel = 1
2
V
Symbol
prog/erase
R
V
f
t
t
t
t
t
FCLK
Mass
IDDBP
Burst
Page
Fcyc
Read
prog
Symbol
C
Δ
f
C
V
C
V
Frame
BYLCD
RTRIM
I
IREG
glass
Buff
—
—
LCD
LCD
Min
150
1.8
1.8
—
5
1.49
Min
.89
1.5
28
—
—
—
—
—
—
.9
Typical
20,000
4000
—
—
—
—
2000
1.00
1.67
9
4
4
Typ
100
100
1.5
30
—
—
—
1
1.85
8000
Max
1.15
100
100
1.8
.15
58
—
.1
Max
6.67
200
3.6
3.6
—
LCD Specifications
1
% V
DD
Unit
Hz
nF
nF
pF
μA
V
V
V
IREG
supply.
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
mA
μs
V
V
39