km416c254d Samsung Semiconductor, Inc., km416c254d Datasheet
km416c254d
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km416c254d Summary of contents
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... DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width, low power consumption and high reli- ability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines. FEATURES • Part Identification - KM416C254D/DL (5V, 512 Ref.) - KM416V254D/DL (3.3V, 512 Ref.) • Active Power Dissipation Speed 3 ...
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... KM416C254D, KM416V254D • KM416C/V254DJ DQ0 3 DQ1 4 DQ2 5 DQ3 DQ4 8 DQ5 9 DQ6 10 DQ7 11 N RAS 15 N PIN CONFIGURATION (Top Views DQ15 38 DQ14 37 DQ13 36 DQ12 DQ11 33 DQ10 32 DQ9 31 DQ8 30 N ...
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... KM416C254D, KM416V254D ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability ...
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... KM416C254D, KM416V254D DC AND OPERATING CHARACTERISTICS Symbol Power Speed I Don t care CC1 I Don t care Don t care CC2 I Don t care CC3 I Don t care CC4 Normal I Don t care CC5 L I Don t care CC6 I L Don t care CC7 I L Don t care CCS Operating Current (RAS and UCAS, LCAS, Address cycling @ ...
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... KM416C254D, KM416V254D CAPACITANCE (T = Parameter Input capacitance [A0 ~ A8] Input capacitance [RAS, UCAS, LCAS, W, OE] Output capacitance [DQ0 - DQ15] AC CHARACTERISTICS ( Test condition (5V device =5.0V 10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V CC Test condition (3.3V device =3.3V 0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V CC Parameter Random read or write cycle time Read-modify-write cycle time ...
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... KM416C254D, KM416V254D AC CHARACTERISTICS (Continued) Parameter Data set-up time Data hold time Refresh period (Normal) Refresh period (L-ver) CAS to W delay time RAS to W delay time Column address to W delay time CAS precharge to W delay time CAS set-up time (CAS -before-RAS refresh) ...
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... KM416C254D, KM416V254D NOTES An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles 1. before proper device operation is achieved. V (min) and V (max) are reference levels for measuring timing of input signals Transition times are measured between V 3. Measured with a load equivalent to 2 TTL(5V)/1 TTL(3.3V) loads and 50pF. ...
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... KM416C254D, KM416V254D are referenced to the earlier CAS rising edge. 13. ASC CAH t 14. is specified from the last CAS rising edge in the previous cycle to the first CAS falling edge in the next cycle 15. is referenced to the later CAS falling edge at word red-modify-write cycle. ...
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... KM416C254D, KM416V254D WORD READ CYCLE RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH t RCD t CAS t CSH t t RCD RSH ...
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... KM416C254D, KM416V254D LOWER BYTE READ CYCLE NOTE : D = OPEN RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH t t RCD RSH ...
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... KM416C254D, KM416V254D UPPER BYTE READ CYCLE NOTE : D = OPEN RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH t RCD t CAS t RAD ...
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... KM416C254D, KM416V254D WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH t RCD ...
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... KM416C254D, KM416V254D LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH ...
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... KM416C254D, KM416V254D UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH ...
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... KM416C254D, KM416V254D WORD WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH t RCD ...
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... KM416C254D, KM416V254D LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH ...
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... KM416C254D, KM416V254D UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH ...
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... KM416C254D, KM416V254D WORD READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t RWC t RAS t t RCD RSH RCD ...
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... KM416C254D, KM416V254D LOWER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 RWC t RAS t t RCD RSH t RAD ...
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... KM416C254D, KM416V254D UPPER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 I/OL t RWC t RAS t t RCD RSH t RAD ...
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... KM416C254D, KM416V254D HYPER PAGE MODE WORD READ CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 RASP ...
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... KM416C254D, KM416V254D HYPER PAGE MODE LOWER BYTE READ CYCLE RAS CRP UCAS LCAS RAD t t ASR RAH ROW ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 RASP ¡ ...
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... KM416C254D, KM416V254D HYPER PAGE MODE UPPER BYTE READ CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... KM416C254D, KM416V254D HYPER PAGE MODE WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... KM416C254D, KM416V254D HYPER PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR t RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... KM416C254D, KM416V254D HYPER PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 ...
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... KM416C254D, KM416V254D HYPER PAGE MODE WORD READ - MODIFY - WRITE CYCLE RAS CRP t RCD UCAS CRP t RCD LCAS RAD ASR ASC ROW A ADDR RCS DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 ...
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... KM416C254D, KM416V254D HYPER PAGE MODE LOWER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP t RCD LCAS RAD ASR ASC ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 ...
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... KM416C254D, KM416V254D HYPER PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE RAS CRP t RCD UCAS CRP LCAS RAD ASR ASC ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 ...
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... KM416C254D, KM416V254D HYPER PAGE READ AND WRITE MIXED CYCLE RAS UCAS t RCD LCAS t RAD RAH t t ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t RASP t t READ( ...
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... KM416C254D, KM416V254D RAS - ONLY REFRESH CYCLE NOTE : Don t care OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR CAS - BEFORE - RAS REFRESH CYCLE NOTE : OE Don t care ...
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... KM416C254D, KM416V254D HIDDEN REFRESH CYCLE ( READ ) RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t t RCD RSH t t RCD ...
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... KM416C254D, KM416V254D HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t t RCD ...
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... KM416C254D, KM416V254D CAS-BEFORE-RAS REFRESH COUNTER TEST CYCLE RAS CSR UCAS CSR LCAS READ CYCLE t WRP DQ0 ~ DQ15 WRITE CYCLE t WRP ...
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... KM416C254D, KM416V254D CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : Don t care RAS RPC UCAS LCAS DQ0 ~ DQ7 CEZ DQ8 ~ DQ15 RASS t CSR CP t CSR CMOS DRAM t RPS t RPC ...
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... KM416C254D, KM416V254D PACKAGE DIMENSION 40 SOJ 400mil #40 #1 0.0375 (0.95) 0.050 (1.27) 44(40) TSOP(II) 400mil 0.032 (0.805) 1.041 (26.44) MAX 1.020 (25.92) 1.030 (26.16) 0.026 (0.66) 0.032 (0.81) 0.015 (0.38) 0.021 (0.53) 0.741 (18.81) MAX 0.721 (18.31) 0.047 (1.20) 0.729 (18.51) MAX 0.0315 (0.80) 0.002 (0.05) MIN 0.010 (0.25) 0.018 (0.45) CMOS DRAM Units : Inches (millimeters) 0.006 (0.15) 0.012 (0.30) 0.027 (0.69) MIN Units : Inches (millimeters) 0 ...