km416v4104c Samsung Semiconductor, Inc., km416v4104c Datasheet - Page 7

• Manufacturer Part Number: km416v4104c
• Description: 4m X 16bit Cmos Dynamic Ram With Extended Data Out
• Manufacturer: Samsung Semiconductor, Inc.

TEST MODE CYCLE
KM416V4004C,KM416V4104C
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
RAS pulse width
CAS pulse width
RAS hold time
CAS hold time
Column Address to RAS lead time
CAS to W delay time
RAS to W delay time
Column Address to W delay time
Hyper Page cycle time
Hyper Page read-modify-write cycle time
RAS pulse width (Hyper page cycle)
Access time from CAS precharge
OE access time
OE to data delay
OE command hold time
Parameter
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RC
RWC
RAC
CAC
AA
RAS
CAS
RSH
CSH
RAL
CWD
RWD
AWD
HPC
HPRWC
RASP
CPA
OEA
OED
OEH
Symbol
Min
110
79
50
12
18
39
28
29
62
40
22
52
50
13
13
-45
200K
Max
10K
10K
50
17
28
29
17
Min
121
89
55
13
18
43
30
35
72
47
25
53
55
18
18
-5
200K
Max
10K
10K
55
18
30
33
18
Min
145
109
65
15
20
50
35
39
84
54
30
61
65
20
20
-6
200K
Max
10K
10K
65
20
35
40
20
CMOS DRAM
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
( Note 11 )
3,4,10,12
3,4,5,12
3,10,12
Note
21
21
7
7
7
3
3