km41v4000d Samsung Semiconductor, Inc., km41v4000d Datasheet

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km41v4000d

Manufacturer Part Number
km41v4000d
Description
1bit Cmos Dynamic With Fast Page Mode
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
KM41C4000D, KM41V4000D
• Performance Range
This is a family of 4,194,304 x 1bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells
within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power), and
package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and
Hidden refresh capabilities. Furthermore, self-refresh operation is available in Low power version.
This 4Mx1 Fast Page Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and high per-
formance microprocessor systems.
FEATURES
• Part Identification
• Active Power Dissipation
• Refresh Cycles
KM41C4000D
KM41V4000D
Speed
- KM41C4000D/D-L(5V, 1K Ref.)
- KM41V4000D/D-L(3.3V, 1K Ref.)
-5
-6
-7
Speed
Part
NO.
-5
-6
-7
50ns
60ns
70ns
t
RAC
15ns
15ns 110ns 40ns
20ns 130ns 45ns
t
Refresh
CAC
cycle
1K
3.3V
220
200
4M x 1Bit CMOS Dynamic RAM with Fast Page Mode
-
90ns 35ns
t
RC
Normal
16ms
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
Refresh Period
t
PC
470
415
360
Unit : mW
5V
Remark
5V/3.3V
5V/3.3V
5V only
128ms
L-ver
DESCRIPTION
A0~A9
RAS
CAS
W
FUNCTIONAL BLOCK DIAGRAM
• Fast Page Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (3.3V, L-ver only)
• Fast parallel test mode capability
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Common I/O using early write
• JEDEC Standard pinout
• Available in 26(20)-pin SOJ 300mil and TSOP(II)
• +5V 10% power supply(5V product)
• +3.3V 0.3V power supply(3.3V product)
300mil packages
Control
Clocks
Row Address Buffer
Col. Address Buffer
Refresh Counter
Refresh Control
Refresh Timer
VBB Generator
Column Decoder
Memory Array
Row Decoder
4,194,304 x1
Cells
CMOS DRAM
Vcc
Vss
Data out
Data in
Buffer
Buffer
D
Q

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km41v4000d Summary of contents

Page 1

... This 4Mx1 Fast Page Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and high per- formance microprocessor systems. FEATURES • Part Identification - KM41C4000D/D-L(5V, 1K Ref.) - KM41V4000D/D-L(3.3V, 1K Ref.) • Active Power Dissipation Speed 3. ...

Page 2

... KM41C4000D, KM41V4000D •KM41C/V4000DJ RAS 3 N.C 4 A10 SOJ ) PIN CONFIGURATION (Top Views CAS 17 N Pin Name Pin function A0 - A10 Address Inputs D Data In Q Data out V Ground ...

Page 3

... KM41C4000D, KM41V4000D ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability ...

Page 4

... KM41C4000D, KM41V4000D DC AND OPERATING CHARACTERISTICS Symbol Power I Don t Care CC1 I Don t Care CC2 I Don t Care CC3 I Don t Care CC4 Normal I CC5 L I Don t Care CC6 I L CC7 I L CCS Operating Current (RAS and CAS cycling @ CC1 I : Standby Current (RAS=CAS=W=V CC2 RAS-only Refresh Current (CAS=V ...

Page 5

... KM41C4000D, KM41V4000D CAPACITANCE (T = Parameter Input capacitance [D] Input capacitance [A0 ~ A10] Input capacitance [RAS, CAS, W] Output capacitance [Q] AC CHARACTERISTICS ( Test condition (5V device =5.0V 10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V CC Test condition (3.3V device =3.3V 0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V CC Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS ...

Page 6

... KM41C4000D, KM41V4000D AC CHARACTERISTICS ( Parameter Data set-up time Data hold time Refresh period (Normal) Refresh period (L-ver) Write command set-up time CAS to W delay time RAS to W delay time Column address to W delay time CAS precharge to W delay time CAS set-up time (CAS-before-RAS refresh) ...

Page 7

... KM41C4000D, KM41V4000D TEST MODE CYCLE Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address RAS pulse width CAS pulse width RAS hold time CAS hold time Column Address to RAS lead time ...

Page 8

... KM41C4000D, KM41V4000D NOTES An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles 1. before proper device operation is achieved (min) and V (max) are reference levels for measuring timing of input signals. Transition times are measured between (min) and V (max) and are assumed to be 5ns for all inputs ...

Page 9

... KM41C4000D, KM41V4000D READ CYCLE RAS CRP CAS ASR ADDRESS RAS t CSH t RCD t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t RCS CAC t CLZ t RAC OPEN CMOS DRAM ...

Page 10

... KM41C4000D, KM41V4000D WRITE CYCLE ( EARLY WRITE ) RAS CRP CAS ASR ADDRESS RAS t CSH t RCD t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t CWL t RWL t WCS t WCH DATA-IN ...

Page 11

... KM41C4000D, KM41V4000D READ-WRITE / READ - MODIFY - WRTIE CYCLE RAS CRP CAS ASR ROW A ADDR RWC t RAS t t RCD RSH t CAS t RAD t t RAH ASC t CAH COLUMN ADDRESS t AWD ...

Page 12

... KM41C4000D, KM41V4000D FAST PAGE READ CYCLE RAS CRP CAS ASR ROW A ADDR RASP ¡ó RCD t CAS t CAS t RAD ¡ó t ASC t CSH t t ASC CAH t t RAH ...

Page 13

... KM41C4000D, KM41V4000D FAST PAGE WRITE CYCLE ( EARLY WRITE ) RAS CRP CAS ASR ROW A ADDR RASP ¡ó RCD CP t CAS t CAS t RAD t ASC t CSH RAH t ASC CAH ...

Page 14

... KM41C4000D, KM41V4000D FAST PAGE READ - MODIFY - WRITE CYCLE RAS RCD CAS RAD t ASR ROW A ADDR CSH t CAS t RAH t CAH t ASC COL. ADDR t RCS t CWL CWD t AWD ...

Page 15

... KM41C4000D, KM41V4000D RAS - ONLY REFRESH CYCLE NOTE : Don t care OPEN OUT RAS CRP CAS ASR ROW A ADDR CAS - BEFORE - RAS REFRESH CYCLE NOTE : A = Don t care RAS CAS ...

Page 16

... KM41C4000D, KM41V4000D HIDDEN REFRESH CYCLE ( READ ) RAS CRP CAS ASR ADDRESS RAS t t RCD RSH t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t RAL t RCS CAC t CLZ t RAC ...

Page 17

... KM41C4000D, KM41V4000D HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CRP CAS ASR ADDRESS RAS t t RCD RSH t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t RAL t t WCS ...

Page 18

... KM41C4000D, KM41V4000D CAS-BEFORE-RAS REFRESH COUNTER TEST CYCLE RAS CSR CAS READ CYCLE t WRP WRITE CYCLE t WRP READ-MODIFY-WRITE t WRP ...

Page 19

... KM41C4000D, KM41V4000D CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : A = Don t care RAS CAS TEST MODE IN CYCLE NOTE : Don t care RAS CAS ...

Page 20

... KM41C4000D, KM41V4000D PLASTIC SMALL OUT-LINE J-LEAD 26(20) SOJ 300mil #26(20) 0.0375 (0.95) 26(20) TSOP(II) 300mil 0.037 (0.95) 0.691 (17.55) MAX 0.670 (17.03) 0.680 (17.27) 0.050 (1.27) 0.026 (0.66) 0.032 (0.81) 0.015 (0.38) 0.021 (0.53) 0.691 (17.54) MAX 0.671 (17.04) 0.047 (1.20) 0.679 (17.24) MAX 0.050 (1.27) 0.002 (0.05) MIN 0.012 (0.30) 0.020 (0.50) CMOS DRAM Units : Inches (millimeters) 0.006 (0.15) 0.012 (0.30) 0.027 (0.69) MIN Units : Inches (millimeters) 0 ...

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