km41v4000d Samsung Semiconductor, Inc., km41v4000d Datasheet
km41v4000d
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km41v4000d Summary of contents
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... This 4Mx1 Fast Page Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and high per- formance microprocessor systems. FEATURES • Part Identification - KM41C4000D/D-L(5V, 1K Ref.) - KM41V4000D/D-L(3.3V, 1K Ref.) • Active Power Dissipation Speed 3. ...
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... KM41C4000D, KM41V4000D •KM41C/V4000DJ RAS 3 N.C 4 A10 SOJ ) PIN CONFIGURATION (Top Views CAS 17 N Pin Name Pin function A0 - A10 Address Inputs D Data In Q Data out V Ground ...
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... KM41C4000D, KM41V4000D ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability ...
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... KM41C4000D, KM41V4000D DC AND OPERATING CHARACTERISTICS Symbol Power I Don t Care CC1 I Don t Care CC2 I Don t Care CC3 I Don t Care CC4 Normal I CC5 L I Don t Care CC6 I L CC7 I L CCS Operating Current (RAS and CAS cycling @ CC1 I : Standby Current (RAS=CAS=W=V CC2 RAS-only Refresh Current (CAS=V ...
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... KM41C4000D, KM41V4000D CAPACITANCE (T = Parameter Input capacitance [D] Input capacitance [A0 ~ A10] Input capacitance [RAS, CAS, W] Output capacitance [Q] AC CHARACTERISTICS ( Test condition (5V device =5.0V 10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V CC Test condition (3.3V device =3.3V 0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V CC Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS ...
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... KM41C4000D, KM41V4000D AC CHARACTERISTICS ( Parameter Data set-up time Data hold time Refresh period (Normal) Refresh period (L-ver) Write command set-up time CAS to W delay time RAS to W delay time Column address to W delay time CAS precharge to W delay time CAS set-up time (CAS-before-RAS refresh) ...
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... KM41C4000D, KM41V4000D TEST MODE CYCLE Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address RAS pulse width CAS pulse width RAS hold time CAS hold time Column Address to RAS lead time ...
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... KM41C4000D, KM41V4000D NOTES An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles 1. before proper device operation is achieved (min) and V (max) are reference levels for measuring timing of input signals. Transition times are measured between (min) and V (max) and are assumed to be 5ns for all inputs ...
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... KM41C4000D, KM41V4000D READ CYCLE RAS CRP CAS ASR ADDRESS RAS t CSH t RCD t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t RCS CAC t CLZ t RAC OPEN CMOS DRAM ...
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... KM41C4000D, KM41V4000D WRITE CYCLE ( EARLY WRITE ) RAS CRP CAS ASR ADDRESS RAS t CSH t RCD t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t CWL t RWL t WCS t WCH DATA-IN ...
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... KM41C4000D, KM41V4000D READ-WRITE / READ - MODIFY - WRTIE CYCLE RAS CRP CAS ASR ROW A ADDR RWC t RAS t t RCD RSH t CAS t RAD t t RAH ASC t CAH COLUMN ADDRESS t AWD ...
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... KM41C4000D, KM41V4000D FAST PAGE READ CYCLE RAS CRP CAS ASR ROW A ADDR RASP ¡ó RCD t CAS t CAS t RAD ¡ó t ASC t CSH t t ASC CAH t t RAH ...
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... KM41C4000D, KM41V4000D FAST PAGE WRITE CYCLE ( EARLY WRITE ) RAS CRP CAS ASR ROW A ADDR RASP ¡ó RCD CP t CAS t CAS t RAD t ASC t CSH RAH t ASC CAH ...
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... KM41C4000D, KM41V4000D FAST PAGE READ - MODIFY - WRITE CYCLE RAS RCD CAS RAD t ASR ROW A ADDR CSH t CAS t RAH t CAH t ASC COL. ADDR t RCS t CWL CWD t AWD ...
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... KM41C4000D, KM41V4000D RAS - ONLY REFRESH CYCLE NOTE : Don t care OPEN OUT RAS CRP CAS ASR ROW A ADDR CAS - BEFORE - RAS REFRESH CYCLE NOTE : A = Don t care RAS CAS ...
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... KM41C4000D, KM41V4000D HIDDEN REFRESH CYCLE ( READ ) RAS CRP CAS ASR ADDRESS RAS t t RCD RSH t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t RAL t RCS CAC t CLZ t RAC ...
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... KM41C4000D, KM41V4000D HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CRP CAS ASR ADDRESS RAS t t RCD RSH t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t RAL t t WCS ...
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... KM41C4000D, KM41V4000D CAS-BEFORE-RAS REFRESH COUNTER TEST CYCLE RAS CSR CAS READ CYCLE t WRP WRITE CYCLE t WRP READ-MODIFY-WRITE t WRP ...
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... KM41C4000D, KM41V4000D CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : A = Don t care RAS CAS TEST MODE IN CYCLE NOTE : Don t care RAS CAS ...
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... KM41C4000D, KM41V4000D PLASTIC SMALL OUT-LINE J-LEAD 26(20) SOJ 300mil #26(20) 0.0375 (0.95) 26(20) TSOP(II) 300mil 0.037 (0.95) 0.691 (17.55) MAX 0.670 (17.03) 0.680 (17.27) 0.050 (1.27) 0.026 (0.66) 0.032 (0.81) 0.015 (0.38) 0.021 (0.53) 0.691 (17.54) MAX 0.671 (17.04) 0.047 (1.20) 0.679 (17.24) MAX 0.050 (1.27) 0.002 (0.05) MIN 0.012 (0.30) 0.020 (0.50) CMOS DRAM Units : Inches (millimeters) 0.006 (0.15) 0.012 (0.30) 0.027 (0.69) MIN Units : Inches (millimeters) 0 ...