stm101n SamHop Microelectronics Corp., stm101n Datasheet - Page 2

• Manufacturer Part Number: stm101n
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: SamHop Microelectronics Corp.

STM101N
ELECTRICAL CHARACTERISTICS
Symbol
BV
R
C
C
C
OFF CHARACTERISTICS
I
I
V
g
t
t r
t
t f
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Notes
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
V
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting T
DSS
GSS
D(ON)
D(OFF)
FS
DS(ON)
ISS
OSS
RSS
GS(th)
g
gs
gd
SD
DSS
Drain-Source Breakdown Voltage
Parameter
Drain-Source On-State Resistance
Output Capacitance
Gate-Source Charge
Gate-Drain Charge
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Diode Forward Voltage
J
=25
°
C,L=0.5mH,V
_
DD
=50V,V
c
_
c
GS
=10V.(See Figure13)
( T
_
A
=25 ° C unless otherwise noted )
Conditions
V
V
V
V
V
V
V
V
V
I
V
R
V
V
V
V
f=1.0MHz
D
GS
GS
GS
DS
DS
DS
DD
GS
DS
GS
DS
GEN
DS
GS
GS
=1A
=0V , I
=80V , V
=10V , I
=4.5V , I
=V
=10V , I
=25V,V
=50V,I
=50V,I
= ±20V , V
=50V
=10V
=10V
=0V,I
=6 ohm
GS
2
S
, I
D
=1A
D
D
=250uA
D
GS
=1.5A,V
=1.5A,
D
D
GS
D
=250uA
=1.5A
=1.5A
=1A
=0V
=0V
DS
=0V
GS
=10V
100
Min
1
www.samhop.com.tw
0.785
170
16.5
310
260
Typ
1.8
5.5
3.5
5.5
35
20
9
8
1
2
±100
Max
210
350
1.3
3
1
Oct,08,2010
m ohm
m ohm
Ver1.0
Units
uA
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
V
S
V