stm1a60 SemiWell Semiconductor Co., Ltd., stm1a60 Datasheet

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stm1a60

Manufacturer Part Number
stm1a60
Description
Bi-directional Triode Thyristor
Manufacturer
SemiWell Semiconductor Co., Ltd.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
STM1A60
Manufacturer:
SEMIWE
Quantity:
2 941
Bi-Directional Triode Thyristor
Features
General Description
This device is suitable for low power AC switching applica-
tion, phase control application such as fan speed and tem-
perature modulation control, lighting control and static
switching relay also designed for use in MPU interface, TTL-
logic.
Absolute Maximum Ratings
Feb, 2004. Rev. 0
Symbol
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
High Commutation dv/dt
Sensitive Gate Triggering 4 Mode
Surface Mount Package
I
P
V
T(RMS)
T
I
P
V
G(AV)
I
TSM
DRM
GM
T
STG
I
GM
GM
2
SemiWell
J
t
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
2
t
Value for fusing
Semiconductor
Parameter
T(RMS)
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
= 1 A )
( T
J
= 25°C unless otherwise specified )
Sine wave, 50 to 60 Hz, Gate open
T
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
tp=10mS
T
T
tp = 20us, T
tp = 20us, T
C
C
C
= 90 °C, Full Sine wave
= 90 °C, Pulse width ≤ 1.0us
= 90 °C, t=8.3ms
J
J
=125°C
=125°C
Condition
Symbol
SOT-223
2
STM1A60
1.T1
- 40 ~ 125
- 40 ~ 150
▼ ▲
Ratings
9.1/10
0.41
1.0
1.0
0.1
0.5
6.0
1
600
2.T2
2
3.Gate
3
Units
A
°C
°C
W
W
V
A
A
A
V
2
s
1/5

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stm1a60 Summary of contents

Page 1

... Full Sine wave C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive tp=10mS = 90 °C, Pulse width ≤ 1.0us °C, t=8.3ms 20us, T =125° 20us, T =125°C J STM1A60 Symbol 2.T2 ○ ▼ ▲ ○ 3.Gate 1.T1 ○ SOT-223 Ratings Units 600 V 1 ...

Page 2

... STM1A60 Electrical Characteristics Symbol Items Repetitive Peak Off-State I DRM Current V Peak On-State Voltage GT1 - I II GT1 Gate Trigger Current - I III GT3 + IV I GT3 + V I GT1 - V II GT1 Gate Trigger Voltage - V III GT3 + V IV GT3 V Non-Trigger Gate Voltage GD Critical Rate of Rise Off- ...

Page 3

... Fig 6. Gate Trigger Voltage vs 0.1 - STM1A60 125 1.0 1.5 2.0 2.5 3.0 3.5 4.0 On-State Voltage [V] Allowable Case Temperature θ π π 2 θ 360° θ : Conduction Angle ...

Page 4

... STM1A60 Fig 7. Gate Trigger Current vs. Junction Temperature 10 1 0.1 - Junction Temperature [ Fig 9. Gate Trigger Characteristics Test Circuit 10Ω ▼ ▲ A ● ● Test Procedure Ⅰ 4 GT1 _ I GT1 GT3 GT3 0 10 100 150 10Ω ...

Page 5

... STM1A60 SOT-223 Package Dimension Dim. Min 0.02 B 0.60 B1 2.90 C 0. 3.30 H 6.70 V 5/5 mm Typ. Max. Min. 1.80 0.1 0.0008 0.70 0.85 0.024 3.00 3.15 0.114 0.26 0.35 0.009 6.50 6.70 0.248 2.3 4.6 3.50 3.70 0.130 7.00 7.30 0.264 10° Max Inch Typ. Max. 0.071 0.004 0.027 0.034 0.118 0.124 0.010 0.014 0.256 0.264 0.090 0.181 0.138 0.146 ...

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