kf50n06p Korea Electronics (KEC GROUP), kf50n06p Datasheet
kf50n06p
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kf50n06p Summary of contents
Page 1
... DP E 330 dv/dt 4.5 V/ 0.77 W/℃ ℃ T 150 j ℃ T -55～150 stg ℃/W R 1.3 thJC ℃/W R 62.5 thJA KF50N06P N CHANNEL MOS FIELD EFFECT TRANSISTOR DIM MILLIMETERS G 9.9 0 15.95 MAX Q C 1.3+0.1/-0.05 I 0.8 0 2.8 0 0.5+0.1/-0. ...
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... Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. Marking 1 KF50N06 P 901 2 PRODUCT NAME 1 LOT NO 2 2009 Revision KF50N06P SYMBOL TEST CONDITION BV I =250μ DSS D ΔBV /ΔT I =250μ A, Referenced to 25℃ DSS j ...
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... Drain - Source Voltage V Fig3 250 DS 1.1 1.0 0.9 0.8 - Junction Temperature Fig5 100 100 0.4 0.6 0.8 Source - Drain Voltage V 2009 Revision KF50N06P - =10V 100 ( DSS 100 150 1.2 1.4 (V) SD Fig2. I ...
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... Revision KF50N06P (V) DS (KF50N06P 100 s 1ms 10ms 100ms DC 10 100 (V) DS Fig 11 KF50N06P Square Wave Pulse Duration (sec) Fig =48V Gate - Charge Q g (nC) Fig 10 ...
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... Fig12. Gate Charge I D 0.8 V DSS 1.0 mA Fig13. Single Pulsed Avalanche Energy 50V Fig14. Resistive Load Switching 0.5 V DSS 25 10V 2009 Revision KF50N06P Fast Recovery Diode DSS 10 ...
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... Fig15. Source - Drain Diode Reverse Recovery and dv / 0.5 V DSS 10V 2009 Revision KF50N06P DUT (DUT (DUT) driver V GS Body Diode Forword Current I RM Body Diode Reverse Current Body Diode Recovery dv/ Body Diode Forword Voltage drop ...