ald1108e Advanced Linear Devices Inc (ALD), ald1108e Datasheet - Page 4
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ald1108e
Manufacturer Part Number
ald1108e
Description
Quad/dual Epad Precision Matched Pair N-channel Mosfet Array
Manufacturer
Advanced Linear Devices Inc (ALD)
Datasheet
1.ALD1108E.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ald1108eSCL
Manufacturer:
Advanced Linear Devices
Quantity:
135
ALD1108E/ALD1110E
OPERATING ELECTRICAL CHARACTERISTICS (cont'd)
T
Parameter
Transconductance
Transconductance Match
Low Level Output
Conductance
High Level Output
Conductance
Drain Off Leakage Current
Gate Leakage Current
Input Capacitance
Cross Talk
Relaxation Time Constant
Relaxation Voltage
E-TRIM CHARACTERISTICS
T
Parameter
E-trim V
Resolution of V
E-trim Pulse Step
Change in V
E-trim Pulse
E-trim Pulse Voltage
E-trim Pulse Current
Pulse Frequency
A
A
= 25 C V + = +5.0V unless otherwise specified
= 25 C V + = +5.0V unless otherwise specified
t
Range
t
4
Per
t
4
4
4
4
4
4
4
Symbol
gm
g
g
I
I
C
t
V
Symbol
V
RV
Vp
Ip
ƒ pulse
D(OFF)
GSS
RLX
OL
OH
V
gm
ISS
RLX
t
t
t
/ N
1.000
11.75
Min
Min
ALD1108E
ALD1108E
12.00
Typ
Typ
-0.3
0.05
Advanced Linear Devices
1.4
25
68
10
25
60
0.1
0.5
50
6
5
2
2
3.000
12.25
Max
Max
400
100
1
4
1
1.000
11.75
Min
Min
ALD1110E
ALD1110E
12.00
Typ
Typ
0.05
-0.3
1.4
0.1
0.5
25
68
10
25
60
50
6
5
2
2
3.000
12.25
Max
Max
400
100
4
1
1
V
mA
mA/V
pA
nA
pA
nA
pF
dB
Hours
%
V
mV
mV/ pulse
KH
Unit
A/V
A/V
A/V
Unit
Z
V
V
V
V
T
T
f = 100KHz
1.0V
V
V
D
D
G
G
A
A
t
t
= 1.0V
= 2.5V
= 10V,V
= 10V,V
= V
= V
= 125 C
= 125 C
Conditions
Conditions
Test
Test
t
t
V
+0.5V
+4.0V
t
G
G
3.0V
=V
=V
t
t
+ 4.0
+ 4.0
4