ald1115 Advanced Linear Devices Inc (ALD), ald1115 Datasheet

ald1115

Manufacturer Part Number

ald1115

Description

Complementary N-channel And P-channel Mosfet

Manufacturer

Advanced Linear Devices Inc (ALD)

Datasheet

1.ALD1115.pdf (6 pages)

Available stocks

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Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

ald1115MAL

Manufacturer:

Advanced Linear Devices

Quantity:

135

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

ald1115PAL

Manufacturer:

Advanced Linear Devices Inc

Quantity:

135

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ORDERING INFORMATION

GENERAL DESCRIPTION

The ALD1115 is a monolithic complementary N-channel and P-channel

transistor pair intended for a broad range of analog applications. These

enhancement-mode transistors are manufactured with Advanced Linear

Devices' enhanced ACMOS silicon gate CMOS process. It consists of

a N-channel MOSFET and a P-channel MOSFET in one package. The

ALD1115 is a dual version of the quad complementary ALD1105.

The ALD1115 offers high input impedance and negative current

temperature coefficient. The transistor pair is designed for precision

signal switching and amplifying applications in +1V to +12V systems

where low input bias current, low input capacitance and fast switching

speed are desired. Since these are MOSFET devices, they feature very

large (almost infinite) current gain in a low frequency, or near DC,

operating environment. When connected in parallel with sources, drains

and gates connected together, a CMOS analog switch can be constructed.

In addition, the ALD1115 is intended as a building block for CMOS

inverters, differential amplifier input stages, transmission gates, and

multiplexer applications.

The ALD1115 is suitable for use in precision applications which require

very high current gain, beta, such as current mirrors and current sources.

The high input impedance and the high DC current gain of the field effect

transistors result in extremely low current loss through the control gate.

The DC current gain is limited by the gate input leakage current, which

is specified at 30pA at room temperature. V+ is connected to the

substrate, which is the most positive voltage potential of the ALD1115,

usually SP(5). Similarly, V- is connected to the most negative voltage

potential of the ALD1115, usually SN (1).

FEATURES

• Thermal tracking between N-channel and P-channel

• Low threshold voltage of 0.7V for both N-channel

• Low input capacitance

• High input impedance -- 10

• Low input and output leakage currents

• Negative current (I

• Enhancement mode (normally off)

• DC current gain 10

• Single N-channel MOSFET and single P-channel

* Contact factory for industrial temperature range.

and P-channel MOSFETs

MOSFET in one package

-55 C to +125 C

8-Pin

CERDIP

Package

ALD1115 DA

INEAR

DVANCED

EVICES,

0 C to +70 C

8-Pin

MSOP

Package

ALD1115 MAL

Operating Temperature Range*

COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET

) temperature coefficient

NC.

("L"suffix for lead free version)

typical

0 C to +70 C

8-Pin

Plastic Dip

Package

ALD1115 PA

ALD1115PAL

0 C to +70 C

8-Pin

SOIC

Package

ALD1115 SA

ALD1115 SAL

PIN CONFIGURATION

APPLICATIONS

• Precision current mirrors

• Complementary push-pull linear drives

• Discrete analog switches

• Analog signal choppers

• Differential amplifier input stage

• Voltage comparator

• Data converters

• Sample and Hold

• Analog current inverter

• Precision matched current sources

• CMOS inverter stage

• Diode clamps

• Source followers

BLOCK DIAGRAM

N DRAIN 1 (3)

P DRAIN 1 (7)

DA, MA, PA, SA PACKAGE

N GATE 1 (2)

P GATE 1 (6)

N SOURCE 1 (1)

V - (4)

P SOURCE 1 (5)

V + (8)

ALD1115

Related parts for ald1115

ald1115 Summary of contents

Page 1

... DC, operating environment. When connected in parallel with sources, drains and gates connected together, a CMOS analog switch can be constructed. In addition, the ALD1115 is intended as a building block for CMOS inverters, differential amplifier input stages, transmission gates, and multiplexer applications. ...

Page 2

... Drain Source R 350 DS(ON) ON Resistance Drain Source BV 12 DSS Breakdown Voltage Off Drain I 10 DS(OFF) Current Gate Leakage I 0.1 GSS Current Input C 1 ISS Capacitance ALD1115 PA, SA package DA package Test Max Unit Conditions 1 mV mmho 10mA ...

Page 3

... DS 0.02 0. DRAIN SOURCE VOLTAGE (V) DRAIN SOURCE ON RESISTANCE R vs. GATE SOURCE VOLTAGE DS (ON) 100 GATE SOURCE VOLTAGE (V) ALD1115 V = -12V GS -10V -8V -6V -4V - -10 - -5mA +125 -10 - +125 -10 ...

Page 4

... DRAIN SOURCE VOLTAGE (V) DRAIN SOURCE ON RESISTANCE R vs. GATE SOURCE VOLTAGE DS (ON) 100 GATE SOURCE VOLTAGE (V) ALD1115 V = 12V GS 10V 10mA +125 Advanced Linear Devices LOW VOLTAGE OUTPUT ...

Page 5

... CURRENT SOURCE MIRROR + SET SET Channel MOSFET Channel MOSFET 3 4 CMOS INVERTER ALD1115 TYPICAL APPLICATIONS + SOURCE Digital Logic Control of Current Source SOURCE SET = V + -Vt R SET ~ = 4 R SET OUT ...

Page 6

... DIODE-CONNECTED CONFIGURATION + OUT = R I SOURCE Channel MOSFET (1/2 ALD1105 ALD1115 TYPICAL APPLICATIONS + OUT = DS CASCODE CURRENT SOURCES + SET SET ALD1116) Advanced Linear Devices SOURCE FOLLOWER +5V ...

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