ald1123esc Advanced Linear Devices Inc (ALD), ald1123esc Datasheet

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ald1123esc

Manufacturer Part Number
ald1123esc
Description
Quad/dual Epad Precision Matched Pair N-channel Mosfet Array
Manufacturer
Advanced Linear Devices Inc (ALD)
Datasheet
ORDERING INFORMATION
FEATURES
* Contact factory for industrial temperature range
© 2003 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com
Electrically Programmable Analog Device
CMOS Technology
Operates from 2V, 3V, 5V to 10V
Flexible basic circuit building block and design element
Very high resolution -- average e-trim voltage
resolution of 0.1mV
Wide dynamic range -- current levels from 0.1 A
to 3000 A
Voltage adjustment range from 1.000V to 3.000V
in 0.1mV steps
Proven, non-volatile CMOS technology
Typical 10 years drift of less than 2mV
Usable in voltage mode or current mode
High input impedance -- 10
Very high DC current gain -- greater than 10
Device operating current has positive temperature
coefficient range and negative temperature
coefficient range with cross-over zero temperature
coefficient current level at 68 A
Tight matching and tracking of on-resistance
between different devices with e-trim
Wide dynamic resistance matching range
Very low input currents and leakage currents
Low cost, monolithic technology
Application-specific or in-system programming modes
Optional user software-controlled automation
Optional e-trim of any standard/custom configuration
Micropower operation
Available in standard PDIP, SOIC and hermetic CDIP packages
Suitable for matched-pair balanced circuit configuration
Suitable for both coarse and fine trimming as well as matched
MOSFET array applications
QUAD/DUAL EPAD
A
L
D
INEAR
DVANCED
EVICES,
0 C to +70 C
16-Pin
Plastic Dip
Package
ALD1123E PC
0 C to +70 C
8-Pin
Plastic Dip
Package
ALD1121E PA
Operating Temperature Range*
Operating Temperature Range*
I
NC.
12
®
PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY
0 C to +70 C
16-Pin
SOIC
Package
ALD1123E SC
0 C to +70 C
8-Pin
SOIC
Package
ALD1121E SA
9
BENEFITS
PIN CONFIGURATION
PIN CONFIGURATION
Precision matched electrically after packaging
Simple, elegant single-chip user option
to trimming voltage/current values
Excellent device matching characteristics with
or without additional electrical trim
Remotely and electrically trim parameters on
circuits that are physically inaccessible
Usable in environmentally sealed circuits
No mechanical moving parts -- high G-shock
tolerance
Improved reliability, dependability, dust and
moisture resistance
Cost and labor savings
Small footprint for high board density
applications
V -
V -
S
2,
1,
N1,
G
D
P
D
S
G
G
D
S
P
P
N1
N1
N1
N4
N4
N4
V -
N1
N4
N1
N1
N1
3
4
1
2
6
1
3
4
5
8
2
7
DA, PA, SA PACKAGE
DC, PC, SC PACKAGE
M 1
M 1
M 4
ALD1121E
ALD1123E
ALD1123E/ALD1121E
M 2
M 2
M 3
5
8
7
6
11
16
15
14
13
12
10
9
D
G
P
S
D
P
N2
D
G
N2
N2
S
G
S
N2
P
N3
N3
N2
N2
N3
N2
N2
N3

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ald1123esc Summary of contents

Page 1

A DVANCED L INEAR D I EVICES, NC. QUAD/DUAL EPAD FEATURES • Electrically Programmable Analog Device CMOS Technology • Operates from 2V, 3V 10V • Flexible basic circuit building block and design element • Very high resolution -- ...

Page 2

APPLICATIONS • Precision PC-based electronic calibration • Automated voltage trimming or setting • Remote voltage or current adjustment of inaccessible nodes • PCMCIA based instrumentation trimming • Electrically adjusted resistive load • Temperature compensated current sources and current mirrors • ...

Page 3

ABSOLUTE MAXIMUM RATINGS + Supply voltage, V referenced to V Supply voltage, V referenced Differential input voltage range Power dissipation Operating temperature range PA, SA, PC, SC package Storage temperature range Lead temperature, 10 seconds OPERATING ELECTRICAL ...

Page 4

OPERATING ELECTRICAL CHARACTERISTICS (cont' +5.0V unless otherwise specified T A Parameter Symbol Transconductance gm Transconductance Match gm Low Level Output Conductance g OL High Level Output Conductance g OH Drain Off Leakage Current I ...

Page 5

TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS + DRAIN SOURCE ON VOLTAGE (V) DRAIN SOURCE ON CURRENT vs. AMBIENT TEMPERATURE ...

Page 6

TYPICAL PERFORMANCE CHARACTERISTICS THRESHOLD VOLTAGE vs. AMBIENT TEMPERATURE 4 3.0 2.0 1.0 0 -50 - AMBIENT TEMPERATURE ( C) TRANSCONDUCTANCE vs. AMBIENT TEMPERATURE 2.5 2.0 1.5 1.0 0.5 0 -50 -25 25 ...

Page 7

TYPICAL PERFORMANCE CHARACTERISTICS DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. AMBIENT TEMPERATURE GATE AND DRAIN SOURCE VOLTAGE (VGS = VDS) (V) CHANGE IN DIFFERENTIAL THRESHOLD VOLTAGE vs. AMBIENT TEMPERATURE +10 +8 ...

Page 8

TYPICAL PERFORMANCE CHARACTERISTICS OFFSET VOLTAGE vs. AMBIENT TEMPERATURE 4 3 REPRESENTATIVE UNITS -50 - AMBIENT TEMPERATURE ( C) GATE SOURCE VOLTAGE vs RESISTANCE 5.0 4.0 +125 C 3.0 +25 ...

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