mm912f634 Freescale Semiconductor, Inc, mm912f634 Datasheet - Page 37

• Manufacturer Part Number: mm912f634
• Description: Mm912f634 - Integrated S12 Based Relay Driver With Lin
• Manufacturer: Freescale Semiconductor, Inc

Electrical Characteristics
3.8
All ESD testing is in conformity with CDF-AEC-Q100 stress test qualification for automotive grade integrated circuits. During the
device qualification, ESD stresses were performed for the Human Body Model (HBM), Machine Model (MM), Charge Device
Model (CDM), as well as LIN transceiver specific specifications.
A device will be defined as a failure if after exposure to ESD pulses, the device no longer meets the device specification.
Complete DC parametric and functional testing is performed per the applicable device specification at room temperature,
followed by hot temperature, unless specified otherwise in the device specification.
Table 46. ESD and Latch-up Protection Characteristics
Freescale Semiconductor
ESD - Human Body Model (HBM) following AEC-Q100 / JESD22-A114
(C
- LIN (DGND, PGND, AGND, and LGND shorted)
- VS1, VS2, VSENSE, Lx
- HSx
- All other Pins
ESD - Charged Device Model (CDM) following AEC-Q100,
Corner Pins (1, 12, 13, 24, 25, 36, 37, and 48)
All other Pins
ESD - Machine Model (MM) following AEC-Q100
(C
Latch-up current at T
ESD GUN - LIN Conformance Test Specification
discharge, C
- LIN (with or without bus filter C
- VS1, VS2 with C
- Lx with serial R
ESD GUN - IEC 61000-4-2 Test Specification
discharge, C
- LIN (with or without bus filter C
- VSENSE with serial R
- VS1, VS2 with C
- Lx with serial R
ESD GUN - ISO10605 Test Specification
C
- LIN (with or without bus filter C
- VSENSE with serial R
- VS1, VS2 with C
- Lx with serial R
ESD GUN - ISO10605 Test Specification
C
- LIN (with or without bus filter C
- VSENSE with serial R
- VS1, VS2 with C
- Lx with serial R
Note:
47.
48.
49.
50.
ZAP
ZAP
ZAP
ZAP
= 150 pF, R
= 330 pF, R
= 100 pF, R
= 200 pF, R
Input Voltage Limit = -2.5 to 7.5 V.
With C
Certification available on request
Tested internally only; certification pending
ESD Protection and Latch-up Immunity
ZAP
ZAP
VBAT
= 150 pF, R
= 150 pF, R
LX
LX
ZAP
LX
ZAP
LX
ZAP
ZAP
VS
VS
VS
VS
(10…100 nF) as part of the battery path.
A
= 2.0 kΩ
= 2.0 kΩ
= 1500 Ω)
= 0 Ω), All Pins
= 125 °C
VSENSE
VSENSE
VSENSE
ZAP
ZAP
(48)
(48)
(48)
(47)
= 330 Ω.
= 330 Ω
BUS
BUS
BUS
BUS
Ratings
=220 pF)
=220 pF)
=220pF)
=220 pF)
(50)
(50)
, unpowered, contact discharge,
, powered, contact discharge,
(50)
(49)
, unpowered, contact
, unpowered, contact
Symbol
V
V
V
I
CDM
LAT
HBM
MM
ESD Protection and Latch-up Immunity
±15000
±20000
±8000
±4000
±3000
±2000
±6000
±8000
±8000
±8000
±8000
±6000
±6000
±6000
±6000
±8000
±8000
±8000
±8000
Value
±750
±500
±200
±100
MM912F634
Unit
mA
V
V
V
V
V
V
V
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