pk200hb160 Sanrex Corp., pk200hb160 Datasheet

pk200hb160

Manufacturer Part Number

pk200hb160

Description

Thyristor Module

Manufacturer

Sanrex Corp.

Datasheet

1.PK200HB160.pdf (2 pages)

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¢Applications£

Power Thyristor/Diode Module PK200HB series are designed for various rectifier

circuits and power controls. For your circuit application. following internal connections

and wide voltage ratings up to 1,600V are available.

Isolated mounting base

Various rectifiers

AC/DC motor drives

Heater controls

Light dimmers

Static switches

ÙMaximum Ratings

ÙElectrical Characteristics

ÎmarkThyristor and Diode part. No markThyristor part

SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com

Rth ¢ j-c£ ÎThermal Impedance, max.

Symbol

di/dt 200 A/s

dv/dt 500V/s

dv/dt

T ¢ RMS£

T ¢ AV£

di/dt

Tstg

T ¢ AV£

G ¢AV£

DRM

TSM

FGM

RRM

tgt

RRM

RSM

DRM

FGM

RGM

ISO

THYRISTOR MODULE

200A, I

ÎRepetitive Peak Reverse Voltage

ÎNon-Repetitive Peak Reverse Voltage

ÎAverage On-State Current

ÎR.M.S. On-State Current

ÎSurge On-State Current

ÎI

ÎIsolation Breakdown Voltage¢R.M.S.£

ÎOperating Junction Temperature

ÎStorage Temperature

ÎRepetitive Peak Reverse Current, max.

ÎPeak On-State Voltage, max.

Repetitive Peak Off-State Voltage

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Gate Current

Peak Gate Voltage¢Forward£

Peak Gate Voltage¢Reverse£

Critical Rate of Rise of On-State Current

Repetitive Peak Off-State Current, max.

Gate Trigger Current/Voltage, max.

Non-Trigger Gate, Voltage. min.

Turn On Time, max.

Critical Rate of Rise of Off-State Voltage, min.

Holding Current, typ.

Lutching Current, typ.

Mounting

Torque

Mass

T ¢ RMS£

( PD,PE )

310A, I

Item

Mounting¢M5£

Terminal¢M8£

TSM

5500A

200HB

Internal Configurations

Single phase, half wave, 180Ã conduction, Tc74Æ

Value for one cycle of surge current

A.C. 1 minute

Recommended Value 1.5-2.5¢15-25£

Recommended Value 8.8-10 ¢90-105£

Typical Value

at V

On-State Current 750A, Tj¹125Æ Inst. measurement

Tj¹25Æ|I

Tj¹125Æ|V

Tj¹25Æ

Junction to case

—

¹250A| I

¹100mA| Tj¹25Æ| V

PK200HB120 PD200HB120

PE200HB120

cycle, 50Hz/60Hz, peak Value, non-reqetitive

DRM

, Single phase, half wave, Tj¹125Æ

¹100mA| Tj¹25Æ| V

¹1A|V

1200

1300

1200

—

Conditions

DRM

¹6V

—

|Exponential wave.

DRM

—

| dI

DRM

Ratings

/dt¹0.1A/ s

| dI

/dt¹0.1A/s

PK200HB160 PD200HB160

PE200HB160

1600

1700

1600

µ40

5000/5500

11¢115£

2.7¢28£

Ratings

125000

100/3

2500

200

310

1.50

0.25

0.18

200

510

500

100

´ 125

UL;E76102 ¢ M£

¢µfKB£

UnitA

mA/V

A/ s

V/ s

Æ/W

Unit

Related parts for pk200hb160

pk200hb160 Summary of contents

Page 1

... Tj¹125Æ| DRM 3 Tj¹25Æ Tj¹25Æ Junction to case UL;E76102 ¢ M£ £ ¢ · ¢ £ ¶ UnitA Unit PK200HB160 PD200HB160 PE200HB160 1600 V 1700 V 1600 V Ratings Unit 200 A 310 A A 5000/5500 125000 ...

Page 2

PK ( PD,PE ) 200HB ¢ £ ¢ £ } ...

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